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US 2018/0122647 A1Published application
Remote Hydrogen Plasma Titanium Deposition to Enhance Selectivity and Film Uniformity
AssigneeApplied Materials, Inc.
InventorsTakashi Kuratomi, Avgerinos V. Gelatos, I-Cheng Chen, Faruk Gungor
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Abstract
Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. The precursors flow through separate channels of a dual channel gas distribution assembly to react in a processing region above a substrate.
Claims20
A processing method comprising:
- flowing a first precursor into a volume in a processing chamber, the volume bounded by a chamber top and a gas distribution assembly;
- energizing the first precursor in the volume and allowing the first precursor to flow through first fluid channels formed in the gas distribution assembly into a processing region in the processing chamber;
- and
- flowing a second precursor through the gas distribution assembly through second fluid channels into the processing region to react the first precursor in the processing region.
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A processing method comprising:
- positioning a substrate with a first surface and a second surface different from the first surface in a processing region of a processing chamber;
- flowing an energized first precursor through a dual channel gas distribution assembly into the processing region;
- flowing a second precursor through the dual channel gas distribution assembly into the processing region;
- and
- reacting the energized first precursor and the second precursor in the processing region to deposit a film on the first surface.
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A processing method comprising:
- positioning a substrate with a first surface and a second surface different from the first surface in a processing region of a processing chamber, the first surface comprising silicon and the second surface comprising silicon oxide;
- energizing a first precursor comprising H2 to form H+ and H* species in a volume and flowing energized first precursor through first fluid channels in a dual channel gas distribution assembly into the processing region;
- flowing a second precursor comprising titanium chloride through second fluid channels in the dual channel gas distribution assembly into the processing region, the second fluid channels isolated from the first fluid channels;
- and
- reacting the energized first precursor and the second precursor in the processing region to deposit a titanium film selectively on the first surface relative to the second surface with a selectivity greater than or equal to about 10:1.
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Dependencies are inferred from the claim text.