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US 2018/0122645 A1Published application
Precursor for vapor deposition having excellent thermal stability and preparing method thereof
AssigneeHansol Chemical Co., Ltd.
InventorsJung-Woo PARK, Hong-Ki KIM, Mi-Ra PARK, Jun-Hyuck KWON
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Abstract
The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.
Claims8
A compound represented by the following Chemical Formula 1:
- wherein
- M is any one selected from among Zr, Ti, and Hf,
- R1 to R4 are each independently hydrogen;
- a substituted or unsubstituted linear or branched saturated or unsaturated alkyl group having 1 to 3 carbon atoms, or an isomer thereof, and
- Me is a methyl group.
2 more elements
Dependencies are inferred from the claim text.