Method and structure for enabling high aspect ratio sacrificial gates
AssigneeInternational Business Machines Corporation
InventorsKangguo CHENG, Ryan O. JUNG, Fee Li LIE, Jeffrey C. SHEARER, John R. SPORRE, Sean TEEHAN
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Abstract
Sacrificial gate structures having an aspect ratio of greater than 5:1 are formed on a substrate. In some embodiments, each sacrificial gate structure straddles a portion of a semiconductor fin that is present on the substrate. An anchoring element is formed orthogonal to each sacrificial gate structure rendering the sacrificial gate structures mechanically stable. After formation of a planarization dielectric layer, each anchoring element can be removed and thereafter each sacrificial gate structure can be replaced with a functional gate structure.
Claims17
A method of forming a semiconductor structure comprising:
- forming a sacrificial gate stack over a surface of a substrate;
- providing a plurality of hard mask structures on a topmost surface of said sacrificial gate stack;
- forming an anchoring element composed of a pair of spaced apart sacrificial gate cap anchoring portions over segments of each hard mask structure;
- and
- patterning said sacrificial gate stack into a plurality of sacrificial gate structures utilizing said plurality of hard mask structures and said anchoring element as an etch mask.
Dependencies are inferred from the claim text.