Substrate processing method
AssigneeTokyo Electron Limited
InventorsTomohisa Hoshino, Keiichi Fujita, Masato Hamada
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Abstract
A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.
Claims4
A substrate processing method of performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities, the substrate processing method comprising:
- forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom;
- and
- forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.
Dependencies are inferred from the claim text.