US 2018/0122639 A1Published application

Method for manufacturing bonded soi wafer

AssigneeShin-Etsu Handotai Co., Ltd.

InventorsNorihiro KOBAYASHI, Osamu ISHIKAWA, Kenji MEGURO, Taishi WAKABAYASHI, Hiroyuki OONISHI

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Abstract

A method for manufacturing a bonded SOI wafer, including depositing a polycrystalline silicon layer on a base wafer, forming an insulator film on a bond wafer, bonding the bond wafer and a polished surface of the silicon layer with the insulator film interposed, and thinning the bond wafer, wherein a silicon single crystal wafer having a resistivity of 100 Ω-cm or more is the base wafer, the step of depositing the silicon layer includes a stage of forming an oxide film on the surface of the base wafer, and the silicon layer is deposited between 1050° C. and 1200° C. Accordingly, the method enables a polycrystalline silicon layer to be deposited while preventing the progress of single crystallization even through a heat treatment step in the SOI wafer manufacturing process or a heat treatment step in the device manufacturing process and can improve throughput in the polycrystalline silicon layer depositing step.

Claims3

Dependent claims

A method for manufacturing a bonded SOI wafer by bonding a bond wafer and a base wafer each composed of a silicon single crystal with an insulator film being interposed therebetween, the method comprising at least the steps of:

depositing a polycrystalline silicon layer on a surface to be bonded of the base wafer;
polishing a surface of the polycrystalline silicon layer;
forming the insulator film on a surface to be bonded of the bond wafer;
bonding the bond wafer and the polished surface of the polycrystalline silicon layer of the base wafer with the insulator film being interposed therebetween;
thinning the bond wafer that, has been bonded to form an SOI layer;
wherein
a silicon single crystal wafer having a resistivity of 100 Ω·cm or more is used as the base wafer,
the step of depositing the polycrystalline silicon layer includes a stage of previously forming an oxide film having a thickness of 10 nm or more and 30 nm or less on the surface of the base wafer on which the polycrystalline silicon layer is to be deposited, and
the polycrystalline silicon layer is deposited at 1050° C. or more and 1200° C. or less.

6 more elements

Dependencies are inferred from the claim text.