Manufacturing method of semiconductor device

Abstract

The present disclosure is directed to a manufacturing method of a semiconductor device. The manufacturing method includes: providing an initial structure including a to-be-etched material layer and a mask structure located on the to-be-etched material layer, the mask structure including a hydrophilic first mask layer; patterning the mask structure to form a patterned mask structure; etching the to-be-etched material layer by using the patterned mask structure as a mask; performing hydrophobic processing on the first mask layer; and performing cleaning processing. The manufacturing method according to the present disclosure helps to prevent the first mask layer from being adhered or combined during the cleaning processing, thereby resolving the problem that a linear structure collapses.

Dependencies are inferred from the claim text.