Nitride Underlayer and Fabrication Method Thereof

A light-emitting diode, comprising, from bottom up:

• a substrate;
• a sputtered AlN buffer layer;
• an AlxIn1-x-yGayN layer (0≤x≤1, 0≤y≤1) gown via MOCVD;
• wherein the sputtered AlN buffer layer has a flat surface and band-shaped holes therein configured to provide a stress release path;
• an n-type semiconductor layer;
• an active layer;
• and
• a p-type semiconductor layer.

A fabrication method of a nitride underlayer, the method comprising:

• 1) providing a substrate, and forming a band-shaped material layer over a surface of the substrate;
• 2) sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film;
• 3) scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer so as to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside;
• 4) forming an AlxIn1-x-yGayN layer (0≤x≤1, 0≤y≤1) over the sputtered AlN buffer layer via MOCVD;
• wherein a relationship between an energy gap E1 of the band-shaped material layer, an energy gap E2 of the laser beam and an energy gap E3 of the AlN buffer layer is:
• E1<E2<E3.