Method for manufacturing poly-silicon layer, thin film transistor, array substrate and display device

Abstract

The present disclosure provides a method for manufacturing a poly-silicon layer. The method for manufacturing the poly-silicon layer comprises steps of: depositing a porous metal film on a microcrystalline silicon layer of a base substrate; immersing the base substrate deposited with the porous metal film into an etching liquid comprising hydrogen fluoride and oxidants for etching the microcrystalline silicon layer; after the microcrystalline silicon layer has been etched successfully, removing the metal film with an acid solution and washing the microcrystalline silicon layer with a deionized water subsequently so as to obtain a processed microcrystalline silicon layer; and depositing an amorphous silicon layer on the processed microcrystalline silicon layer and subjecting the amorphous silicon layer to laser annealing treatment so as to obtain the poly-silicon layer. The present disclosure further provides a thin film transistor, an array substrate and a display device comprising the poly-silicon layer manufactured according to the above-described method.

Dependencies are inferred from the claim text.