Use of silyl bridged alkyl compounds for dense osg films

A chemical vapor deposition method for depositing an organosilicate film on at least a part of a substrate, the process comprising the steps of:

• providing a substrate within a vacuum chamber;
• introducing into the vacuum chamber a gaseous structure forming composition comprising at least one organosilicon precursor selelcted from the group consisting of Formula (I) and Formula (II):
• wherein,
• R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of —CH3 and —OR8, wherein R8 is a C1-C4 alkyl group;
• R7 is H or —CH3;
• x is 1 or 2;
• and
• n is 1, 2, 3, or 4, wherein at least one R7 is —CH3 when n is 1;
• applying energy to the gaseous structure forming composition in the vacuum chamber to induce reaction of the at least one organosilicon precursor to deposit a film on at least a portion of the substrate.