Precursors and Flowable CVD Methods for Making Low-K Films to Fill Surface Features Features

A method for depositing a silicon-containing film, the method comprising:

• placing a substrate comprising at least one surface feature into a reactor;
• introducing into the reactor at least one organoaminosilane compound having the structure of Formula I:
• (R1R2N)4-nSi—R3n (I),
• wherein R1, R2 and R3 are selected from the group consisting of hydrogen, C1 to C10 linear or branched alkyl, cyclic alkyl, alkenyl, alkynyl, and aryl;
• and n=0, 1, 2, 3, wherein at least one of R1, R2 and R3 is not hydrogen;
• and at least one multifunctional organoamine compound having the structure of Formula II:
• NR4R5R6 (II)
• wherein R4, R5 and R6 are each independently selected from the group consisting of H, a C1-C4 alkylmonoamino group, a C1-C4 alkyldiamino group, and a C1-C4 alkyltriamino group, wherein at least one of R4, R5 and R6 is not hydrogen;
• and
• at least partially reacting the at least one organoaminosilane compound and the multifunctional organoamine compound, optionally in the presence of an energy source, to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature.