Back to results
US 2018/0122586 A1Published application
Dispersion liquid for formation of semiconductor electrode layer, and semiconductor electrode layer
AssigneeMikuni Shikiso Kabushiki Kaisha
InventorsSumiyo SHIMIZU, Taizou HARUYAMA
Life of this patent
Estimating the term…
Abstract
The present invention relates to a slurry for forming a semiconductor electrode layer to obtain a dye-sensitized solar cell containing a porous layer, which is not susceptible to cracking and is capable of providing a higher conversion efficiency. The slurry for forming a semiconductor electrode layer contains two types of metal-oxide semiconductor particles having different particle sizes. When a semiconductor electrode layer is formed by coating and sintering such a slurry, cracking seldom occurs and a higher conversion efficiency is achieved when it is made into a film with a thickness of 3˜20 μm.
Claims20
1:
- A slurry, comprising:
- a liquid medium;
- and
- a plurality of metal-oxide semiconductor fine particles of different primary particle sizes that are dispersed in the liquid medium,
- wherein the metal-oxide semiconductor fine particles include first fine particles having a modal primary particle size of 1˜50 nm and second fine particles having a modal primary particle size of 1˜13 nm such that the metal-oxide semiconductor fine particles in the liquid medium has a dispersed particle size of 1˜200 nm.
2 more elements
2:
- A slurry, comprising:
- a polymer dispersant;
- a liquid medium;
- and
- a plurality of metal-oxide semiconductor fine particles of different primary particle sizes that are dispersed in the liquid medium;
- wherein the metal-oxide semiconductor fine particles include first fine particles having a modal primary particle size of 1˜50 nm and second fine particles having a modal primary particle size of 1˜13 nm.
3 more elements
3:
- The slurry of claim 2, wherein the polymer dispersant is at least one type selected from the group consisting of an acrylic copolymer, a butyral resin, a vinyl acetate copolymer, a hydroxyl group-containing carboxylic acid ester, a salt of a high molecular weight polycarboxylic acid, an alkyl polyamine, and a polyhydric alcohol ester.
4:
- The slurryr of claim 1, wherein the metal-oxide semiconductor fine particles comprise at least one type selected from the group consisting of a titanium oxide, a tin oxide, a niobium oxide, a tungsten oxide, and strontium titanate.
5:
- The slurry of claim 1, wherein the first fine particles and the second fine particles are present at a weight ratio of 100/1˜23.
6:
- A method for forming a semiconductor electrode layer, comprising:
- coating a substrate with the slurry of claim 1;
- and
- sintering a coated slurry.
1 more element
7:
- A semiconductor electrode layer, obtained by a process including coating a substrate with the slurry of claim 1 and sintering a coated slurry.
8:
- The semiconductor electrode layer of claim 7, wherein the metal-oxide semiconductor fine particles comprise at least one type selected from the group consisting of a titanium oxide, a tin oxide, a niobium oxide, a tungsten oxide, and strontium titanate.
9:
- The semiconductor electrode layer of claim 7, wherein the first fine particles and the second fine particles are present in the slurry at a weight ratio of 100/1˜23.
10:
- A semiconductor electrode layer, comprising:
- a plurality of metal-oxide semiconductor fine particles having different primary particle sizes,
- wherein the semiconductor electrode layer has a thickness of 3 μm˜20 μm with substantially no cracking and has conversion efficiency of 8.0 or higher.
11:
- A solar cell, comprising:
- an electrode comprising the semiconductor electrode layer of claim 7.
12:
- A solar cell, comprising:
- an electrode comprising the semiconductor electrode layer of claim 10.
13:
- The semiconductor electrode layer of claim 8, wherein the first fine particles and the second fine particles are present in the slurry at a weight ratio of 100/1˜23.
14:
- The slurry of claim 2, wherein the metal-oxide semiconductor fine particles comprise at least one type selected from the group consisting of a titanium oxide, a tin oxide, a niobium oxide, a tungsten oxide, and strontium titanate.
15:
- The slurry of claim 3, wherein the metal-oxide semiconductor fine particles comprise at least one type selected from the group consisting of a titanium oxide, a tin oxide, a niobium oxide, a tungsten oxide, and strontium titanate.
16:
- The slurry of claim 2, wherein the first fine particles and the second fine particles are present at a weight ratio of 100/1˜23.
17:
- The slurry of claim 3, wherein the first fine particles and the second fine particles are present at a weight ratio of 100/1˜23.
18:
- The slurry of claim 4, wherein the first fine particles and the second fine particles are present at a weight ratio of 100/1˜23.
19:
- A method for forming a semiconductor electrode layer, comprising:
- coating a substrate with the slurry of claim 2;
- and
- sintering a coated slurry.
1 more element
20:
- The method of claim 19, wherein the metal-oxide semiconductor fine particles comprise at least one type selected from the group consisting of a titanium oxide, a tin oxide, a niobium oxide, a tungsten oxide, and strontium titanate.