Photoelectric device using valley-spin photoelectron
AssigneeIndustry-Academic Cooperation Foundation, Yonsei University
InventorsHyunYong CHOI, SangWan SIM, SoonYoung CHA, DoEon LEE
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Abstract
Provided is a photoelectric device including a receiving part, a detecting part, and a connecting part. The receiving part may include a transition metal dichalcogenide layer and a charge inducing layer covering the transition metal dichalcogenide layer, and the detecting part may include a topological insulating layer spaced apart from the transition metal dichalcogenide layer. The connecting part may be provided to connect the transition metal dichalcogenide layer to the topological insulating layer.
Claims17
A photoelectric device, comprising:
- a receiving part including a transition metal dichalcogenide layer and a charge inducing layer, the charge inducing layer covering the transition metal dichalcogenide layer;
- a detecting part including a topological insulating layer spaced apart from the transition metal dichalcogenide layer;
- and
- a connecting part connecting the transition metal dichalcogenide layer to the topological insulating layer.
A photoelectric device, comprising:
- a transition metal dichalcogenide layer;
- a charge inducing layer configured to apply an electric field to an upper region of the transition metal dichalcogenide layer;
- a topological insulating layer spaced apart from the transition metal dichalcogenide layer;
- and
- a connecting part connecting the transition metal dichalcogenide layer to the topological insulating layer.
Dependencies are inferred from the claim text.