Nonvolatile memory device including a plurality of input/output units and an operating method thereof

An operating method of a nonvolatile memory device that comprises first, second, third and fourth planes, the method comprising:

• receiving first data;
• dividing the first data into first and second partial data and storing the first partial data in the first plane and the second partial data in the second plane;
• receiving second data;
• dividing the second data into third and fourth partial data and storing the third partial data in the third plane and the fourth partial data in the fourth plane;
• outputting one of the first, second, third and fourth partial data through a first input/output unit in a first read mode;
• and
• outputting two of the first, second, third and fourth partial data through the first input/output unit and a second input/output unit in a second read mode.

A nonvolatile memory device, comprising:

• a memory cell array including a plurality of planes;
• a page buffer circuit that includes a plurality of page buffer units, wherein each page buffer unit is connected to a different one of the planes;
• an input/output circuit that includes a first input/output unit connected with each of the page buffer units and a second input/output unit connected with only some of the page buffer units, and
• control logic that controls the input/output circuit to output first data from each of the page buffer units through the first input/output unit in a first read mode and to output second data from a first buffer unit of the buffer units through the first input/output unit and third data from a second buffer unit of the page buffer units through the second input/output unit in the second read mode.