RRAM, and Methods of Storing and Retrieving Information for RRAM
AssigneeMicron Technology, Inc.
InventorAdam Johnson
Life of this patent
Estimating the term…
Abstract
Some embodiments include methods of storing and retrieving data for an RRAM array. The array is subdivided into a plurality of memory bits, with each memory bit having at least two memory cells. A memory bit is programmed by simultaneously changing resistive states of all memory cells within the memory bit. The memory bit is read by determining summed current through all memory cells within the memory bit. Some embodiments include RRAM having a plurality of memory cells. Each of the memory cells is uniquely addressed through a bitline/wordline combination. Memory bits contain multiple memory cells coupled together, with the coupled memory cells within each memory bit being in the same resistive state as one another.
Claims11
Resistive random access memory, comprising:
- a plurality of memory cells comprising programmable material;
- the programmable material having selectively interchangeable resistive states;
- each of the memory cells being uniquely addressed through a bitline/wordline combination;
- and
- memory bits comprising multiple memory cells coupled together;
- the coupled memory cells within each memory bit being in the same resistive state as one another.
Resistive random access memory, comprising:
- a plurality of memory cells comprising programmable material;
- the programmable material having selectively interchangeable resistive states;
- each of the memory cells being uniquely addressed through a bitline/wordline combination;
- and
- memory bits each comprising a set of multiple of the memory cells coupled together and arranged in parallel;
- the set of coupled memory cells being in the same resistive state as one another, each set of coupled memory cells being configured to be separately programmed relative to other sets of coupled memory cells comprised by others of the memory bits.
Dependencies are inferred from the claim text.