Methods of programming memories having a shared resistance variable material
AssigneeMicron Technology, Inc.
InventorAndrea Redaelli
Life of this patent
Estimating the term…
Abstract
Methods for programming data to an array of memory cells having a first memory cell, a second memory cell that is adjacent to the first memory cell in a first direction along a first axis, and a third memory cell that is adjacent to the first memory cell in a second direction along a second axis.
Claims20
A method for programming data to an array of memory cells, wherein the array of memory cells comprise a first memory cell, a second memory cell that is adjacent to the first memory cell in a first direction along a first axis, and a third memory cell that is adjacent to the first memory cell in a second direction along a second axis, wherein the first and third memory cells are back-to-back memory cells that share a same chalcogenide material area that is not cut, the method comprising programming the data to the first and the third memory cells.
A method for programming data to an array of memory cells, wherein the array of memory cells comprise a first memory cell, a second memory cell that is adjacent to the first memory cell in a first direction along an axis, and a third memory cell that is adjacent to the first memory cell in a second direction along the axis that is opposite the first direction, wherein the first memory cell and the second memory cell are separated by a first distance along the axis and the first memory cell and the third memory cell are separated by a second distance, less than the first distance, along the axis, and wherein the first memory cell, the second memory cell and the third memory cell share a same chalcogenide material area that is not cut, the method comprising:
- determining that a first bit of data of a plurality of bits of data is to be programmed and that a second bit of data of the plurality of bits of data is not to be programmed, wherein the first bit of data is located in a particular bit location of the plurality of bits of data and the second bit of data is located in a different bit location of the plurality of bits of data adjacent to the particular bit location;
- replacing the second bit of data in the different bit location with a third bit of data of the plurality of bits of data that is to be programmed;
- and
- programming the first bit of data to the first memory cell and programming the third bit of data to the third memory cell.
A method for programming data to an array of memory cells, wherein the array of memory cells comprise a first memory cell, a second memory cell that is adjacent to the first memory cell in a first direction along an axis, and a third memory cell that is adjacent to the first memory cell in a second direction along the axis that is opposite the first direction, wherein the first memory cell and the second memory cell are separated by a first distance along the axis and the first memory cell and the third memory cell are separated by a second distance, less than the first distance, along the axis, and wherein the first memory cell, the second memory cell and the third memory cell share a same chalcogenide material area that is not cut, the method comprising:
- receiving a data word comprising a plurality of bits of data;
- determining that a first bit of data of the data word is to be programmed and that a second bit of data of the data word is not to be programmed, wherein the first bit of data is located in a particular bit location of the plurality of bits of data of the data word and the second bit of data is located in a different bit location of the plurality of bits of data of the data word adjacent to the particular bit location;
- remapping the data word comprising replacing the second bit of data in the different bit location of the plurality of bits of data of the data word with a third bit of data of the data word that is to be programmed;
- and
- programming the first bit of data to the first memory cell and programming the third bit of data to the third memory cell.
Dependencies are inferred from the claim text.