A method for controlling a non-volatile memory that includes a plurality of bit lines, a plurality of source lines, a discharge line selectively coupled to the source lines, and a plurality of memory cells of a non-volatile type, each memory cell being coupled between a respective bit line and a respective source line, the method comprising:
- biasing a selected source line to a first operating voltage in order to carry out a reading or programming operation in a selected one of the memory cells that is coupled to the selected source line;
- supplying a current to a selected bit line that is coupled to the selected memory cell;
- and
- coupling the selected source line to the discharge line while isolating unselected source lines from the discharge line, so as to form a conductive path between the selected source line and a reference-voltage terminal during the reading or programming operation.