Nonvolatile memory device and operating method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsSUK-SOO PYO, HYUNTAEK JUNG, TAEJOONG SONG, BOYOUNG SEO
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Abstract
An operating method of a nonvolatile memory device includes storing different data in first and second reference cells connected to a word line, checking whether the different data are abnormally stored in the first and second reference cells, and when it is determined that the different data are abnormally stored in the first and second reference cells, swapping the first and second reference cells.
Claims21
An operating method of a nonvolatile memory device, the method comprising:
- first storing a first data in a first reference cell and a second data opposite to the first data in a second reference cell, the first reference cell connected to a word line and the second reference cell connected to the word line;
- determining whether the first and second data are abnormally stored in the first and second reference cells after the first storing is performed;
- and
- when it is determined that the first and second data are abnormally stored in the first and second reference cells, second storing the second data in the first reference cell and the first data in the second reference cell.
An operating method of a nonvolatile memory device including a memory cell array, the method comprising:
- storing different data in first and second reference cells of the memory cell array connected to a word line;
- checking whether the different data are abnormally stored in the first and second reference cells;
- and
- when it is determined that the different data are abnormally stored in the first and second reference cells, swapping the first and second reference cells.
A nonvolatile memory device comprising:
- a first memory cell connected to a first bit line;
- a first reference cell connected to a first reference bit line;
- a second reference cell connected to a second reference bit line;
- and
- a sense amplifier configured to compare a voltage of the first bit line with a reference voltage, wherein the reference voltage is a voltage of a node at which the first reference bit line and the second reference bit line are connected to each other,
- wherein the nonvolatile memory device is configured to perform a reference cell setting operation such that a first data and a second data opposite to the first data are respectively written in the first reference cell and the second reference cell, and when it is determined that the first data and the second data are abnormally written in the first reference cell and the second reference cell, the second data and the first data are respectively written in the first reference cell and the second reference cell.
21-34. (canceled)
Dependencies are inferred from the claim text.