Word-line enable pulse generator, sram and method for adjusting word-line enable time of sram

A static random access memory (SRAM), comprising:

• a word line driving circuit, comprising:
• a plurality of word line drivers, wherein each of the plurality of word line drivers is configured to provide an individual word line signal corresponding to a pre-decoding address in response to a word-line enable pulse signal;
• and
• a word-line enable pulse generator coupled to the plurality of word line drivers via a first wire and configured to provide the word-line enable pulse signal according to an enable signal,
• wherein an edge of the word-line enable pulse signal is delayed from an edge of the enable signal by a delay time corresponding to a resistance unit of the word-line enable pulse generator, and the resistance unit is formed by a second wire parallel to the first wire.

A method for adjusting word-line enable time of a static random access memory (SRAM), comprising:

• placing a word-line enable pulse generator into a placement of the SRAM, wherein the word-line enable pulse generator is configured to provide a word-line enable pulse signal to a plurality of word line drivers of the SRAM according to an enable signal, and the word-line enable pulse generator comprises a delay unit configured to delay the word-line enable pulse signal;
• and
• performing a metal programming process to arrange a wire across a portion of the word line drivers in the placement of the SRAM, wherein the wire forms a resistance unit of the delay unit,
• wherein an edge of the word-line enable pulse signal is delayed from an edge of the enable signal by a delay time corresponding to a resistance of the resistance unit.