Ferroelectric random access memory (feram) array with segmented plate lines that are electrically-isolated from each other

Abstract

A ferroelectric random access memory (FeRAM) array includes (a) a first section of FeRAM cells sharing a first plate line and a word line; and (b) a second section of FeRAM cells sharing a second plate line and the word line, wherein the first plate line and the second plate line are electrically unconnected, and wherein only the first section of FeRAM cells or the second section of FeRAM cells, but not both, are selected for a read operation at any given time. In each section of the FeRAM cells, a plate line selection cell connects the corresponding plate line to a plate line selection line. Each FeRAM cell in each section is read or written over a pair of bit lines running in a direction transverse to the word line of the section, and the plate line selection line runs along a direction parallel to the bit lines.

Dependencies are inferred from the claim text.