Memory decoding system
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsGUANGYAN LUO, HAO NI, CHUNTIAN YU, XIAOYAN LIU
Life of this patent
Estimating the term…
Loading patent…
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsGUANGYAN LUO, HAO NI, CHUNTIAN YU, XIAOYAN LIU
Estimating the term…
A memory decoding system includes a memory decoding reference current module. The memory decoding reference current module includes: a first reference current unit connected to one end of a second reference bit line; a second reference current unit connected to one end of a first reference bit line; a third reference current unit connected to one end of a third reference bit line; a first reference NMOS transistor, a source of which is connected to the second reference bit line; a second reference NMOS transistor, a source of which is connected to a drain of the first reference NMOS transistor; and a gate of the first reference NMOS transistor and a gate of the second NMOS transistor are connected to a logic high level.
A memory decoding system, comprising:
Dependencies are inferred from the claim text.