Systems and methods for managing non-volatile memory based on temperature

A method for managing data stored in three-dimensional non-volatile memory (NVM), the method implemented in a device that is subjected to temperature swings that can affect read performance, the method comprising:

• monitoring a temperature of the device;
• programming a plurality of NVM portions with data in a first band, wherein each NVM portion includes metadata specifying a program temperature, wherein the program temperature is the device temperature at the time data is programmed and is classified as one of an in-bounds temperature, an out-of-bounds temperature, and a margin temperature that is included in a range of temperature values that straddle a boundary between in-bounds temperatures ranges and out-of-bounds temperature ranges;
• determining operating characteristics of the NVM;
• and
• selectively reprogramming the NVM portions determined to have been previously programmed at the margin temperature into new bands based on the determined operating characteristics of the NVM.

A system, comprising:

• non-volatile memory, a temperature sensor, and control circuitry configured to:
• receive instructions to program data into a band of the non-volatile memory, wherein in response to the received instruction, the control circuitry is configured to:
• open the band;
• receive a temperature value from the temperature sensor, wherein the temperature value is classified as one of an in-bounds temperature, an out-of-bounds temperature, and a margin temperature;
• program the data and the temperature value into the band;
• and
• close the band;
• and
• determine operating characteristics of the non-volatile memory;
• and
• selectively reprogram bands determined to have been previously programmed at the margin temperature into new bands based on the operating characteristics of the non-volatile memory.

A method for managing temperature-based moves of data stored in non-volatile memory, comprising:

• receiving a current temperature value from at least one temperature sensor;
• when the current temperature value is below a threshold temperature value:
• programming data into the non-volatile memory according to a single level cell (SLC) mode;
• deferring garbage collection operations;
• and
• deferring SLC mode to multi-level cell (MLC) mode reprogramming operations;
• and
• when the current temperature value is above the threshold temperature value:
• programming data into the non-volatile memory according to the multi-level cell (MLC) mode;
• enabling garbage collection operations;
• and
• enabling SLC mode to multi-level cell (MLC) mode reprogramming operations.