Sintered compact target and method of producing sintered compact
AssigneeJX Nippon Mining & Metals Corporation
InventorsHideaki Fukuyo, Masataka Yahagi, Yasuhiro Yamakoshi, Hideyuki Takahashi
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AssigneeJX Nippon Mining & Metals Corporation
InventorsHideaki Fukuyo, Masataka Yahagi, Yasuhiro Yamakoshi, Hideyuki Takahashi
Estimating the term…
A sintered compact target containing an element(s) (A) and an element(s) (B) as defined below is provided. The sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of less than 1 μm existing in 40000 μm2 of the target surface is 100 micropores or less. The element(s) (A) is one or more chalcogenide elements selected from S, Se, and Te, and the element(s) (B) is one or more Vb group elements selected from Bi, Sb, As, P, and N. The provided technology is able to eliminate the source of grain dropping or generation of nodules in the target during sputtering, and additionally inhibit the generation of particles.
A sintered compact target comprising compositional constituents (A) and (B), where (A) represents one or more chalcogenide elements selected from the group consisting of S, Se, and Te, and (B) represents one or more elements selected from the group consisting of Bi, Sb, As, P, and N, wherein the sintered compact target is free from pores having an average diameter of 1 μm or more, and the number of micropores having an average diameter of 0.1 to 1 μm existing in an area of 40000 μm2 of the target surface at random check is 100 micropores or less, and wherein the sintered compact target has a purity, excluding gas components, of 99.99% (4N) or higher, an oxygen content as a gas component of 2000 ppm or less, and an average crystal grain size of 50 μg or less.
A sintered compact target comprising compositional constituents (A), (B), and one or both of (C) and (D), where (A) represents one or more chalcogenide elements selected from the group consisting of S, Se, and Te, (B) represents one or more elements selected from the group consisting of Bi, Sb, As, P, and N, (C) represents one or more elements selected from the group consisting of Pb, Sn, Ge, Si, and C;
Dependencies are inferred from the claim text.