Secondary ion mass spectroscopic method, mass spectrometer and uses thereof
AssigneeIon-Tof Technologies GmbH
InventorSven Kayser
Life of this patent
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Abstract
In a secondary ion mass spectroscopic (SIMS) method, and a mass spectrometer for implementing the method, for depth-profiling analysis of alkali metals in a sample which comprises an insulating material or is an insulator. The sample is irradiated by an ion beam as an analysis beam for desorption of secondary ions from the uppermost layers, such that the surface of the sample is removed with the same or a further ion beam. The ion beam used for removal of the sample surface comprises essentially gas clusters or consists of gas clusters.
Claims22
-10. (canceled)
In a secondary ion mass spectroscopic (SIMS) method for depth-profiling analysis of alkali metals in a sample comprising an insulating material, the sample being irradiated by an ion beam as an analysis beam for desorption of secondary ions from the uppermost layers of the sample and the surface of the sample being removed with the same or a further ion beam,
- the improvement wherein the ion beam used for removal of the sample surface essentially comprises or consists of gas clusters.
Dependencies are inferred from the claim text.