Charge stripping film for ion beam
AssigneeKaneka Corporation
InventorsMutsuaki Murakami, Masamitsu Tachibana, Atsushi Tatami
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Abstract
A charge stripping film for an ion beam includes a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25° C. of at least 800 W/mK, or a laminated body of the graphitic film. The charge stripping film has a thickness of 100 nm to 10 μm, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of at least 1×10−5/K, and an area of at least 4 cm2.
Claims12
A charge stripping film for an ion beam, comprising:
- a single layer body of a graphitic film having a carbon component of at least 96 at % and a thermal conductivity in a film surface direction at 25° C. of at least 800 W/mK;
- or a laminated body of the graphitic film, wherein
- the charge stripping film has a thickness of 100 nm to 10 μm, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of at least 1×10−5/K, and an area of at least 4 cm2.
A charge stripping film for an ion beam of negative hydrogen, hydrogen or carbon, comprising:
- a single layer body of a graphitic film having a carbon component of at least 98 at % and a thermal conductivity in a film surface direction at 25° C. of at least 1000 W/mK;
- or a laminated body of the graphitic film, wherein
- the charge stripping film has a thickness of 100 nm to 5 m, a tensile strength in a film surface direction of at least 5 MPa, a coefficient of thermal expansion in the film surface direction of at least 1×10−5/K, and an area of at least 4 cm2.
Dependencies are inferred from the claim text.