# US 2018/0027200 A1 · Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0027200 A1 - Document ID: US20180027200A1 - Status: Published application - Kind: A1 - Application number: 15/671,227 - Filed: 2017-08-08 - Published: 2018-01-25 - Earliest claimed: 2011-12-19 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: HIROAKI AMMO - Web page: https://patentgrep.com/patent/US20180027200A1 ## CPC - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/618: for random or high-frequency noise - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/80373: {characterised by the gate of the transistor} - H10F 39/014: {of CMOS image sensors} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly. A solid-state imaging device (1-1) includes: a photodiode (PD) as a photoelectric conversion unit; a transfer gate (TG) that reads out charges from the photodiode (PD); a floating diffusion (FD) from which the charges of the photodiode (PD) are read by an operation of the transfer gate (TG); and an amplifying transistor (Tr3) connected to the floating diffusion (FD). More particularly, the amplifying transistor (Tr3) is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (AG) (gate electrode) extending in a direction perpendicular to convex strips (33) formed by processing a surface layer of a semiconductor layer (11), for example. ## Claims ### Claim 1 An imaging device, comprising: a first photoelectric conversion portion in a first region of a semiconductor layer; a transfer gate on or above a surface layer opposite to a light incident surface layer of the semiconductor layer; a floating diffusion at the surface layer of the semiconductor layer; and an amplifying transistor, in a second region of the semiconductor layer, including a gate electrode, wherein the gate electrode comprises at least a first portion above the surface layer and a second portion between the surface layer and the light incident surface layer, and wherein the amplifying transistor is coupled to the floating diffusion. ### Claim 2 (depends on 1) The imaging device according to claim 1, wherein the transfer gate transfers charges from the first photoelectric conversion portion to the floating diffusion. ### Claim 3 (depends on 1) The imaging device according to claim 1, wherein the amplifying transistor comprises a convex strip on or above the semiconductor layer. ### Claim 4 (depends on 3) The imaging device according to claim 3, wherein the gate electrode extends in a direction perpendicular to the convex strip. ### Claim 5 (depends on 1) The imaging device according to claim 1, wherein the amplifying transistor comprises a channel that includes a plurality of convex strips, and the plurality of convex strips are arranged in parallel. ### Claim 6 (depends on 5) The imaging device according to claim 5, wherein a width of the channel is based on a number of the plurality of convex strips. ### Claim 7 (depends on 5) The imaging device according to claim 5, wherein an impurity density of each convex strip of the plurality of convex strips is adjusted to correspond to a fully-depleted type transistor. ### Claim 8 (depends on 1) The imaging device according to claim 1, wherein the transfer gate extends on a bottom portion of a concave portion of the semiconductor layer to an edge of the floating diffusion. ### Claim 9 (depends on 1) The imaging device according to claim 1, wherein the transfer gate and an amplifier gate of the amplifying transistor are above the surface layer via a gate insulating film. ### Claim 10 (depends on 1) The imaging device according to claim 1, further comprising a plurality of interconnects, wherein the plurality of interconnects that are insulated by an interlayer insulating film are above the gate electrode. ### Claim 11 (depends on 1) The imaging device according to claim 1, wherein the floating diffusion is connected to the first photoelectric conversion portion through the transfer gate. ### Claim 12 (depends on 1) The imaging device according to claim 1, wherein the transfer gate extends from the surface layer to a sidewall of a concave portion of the semiconductor layer. ### Claim 13 (depends on 1) The imaging device according to claim 1, wherein the transfer gate extends from a sidewall of a concave portion of the semiconductor layer to a bottom portion of the concave portion. ### Claim 14 (depends on 1) The imaging device according to claim 1, wherein the first photoelectric conversion portion includes: an exposed-type photoelectric conversion portion on the surface layer of the semiconductor layer; and an embedded-type photoelectric conversion portion buried in the semiconductor layer, wherein the embedded-type photoelectric conversion portion is stacked on the exposed-type photoelectric conversion portion, and wherein the embedded-type photoelectric conversion portion faces a bottom face of a concave portion in the semiconductor layer. ### Claim 15 (depends on 14) The imaging device according to claim 14, further comprising a second photoelectric conversion portion on a reverse face of the semiconductor layer, wherein the second photoelectric conversion portion comprises a photoelectric conversion film, and wherein the second photoelectric conversion portion is stacked on the first photoelectric conversion portion. ### Claim 16 (depends on 14) The imaging device according to claim 14, wherein the embedded-type photoelectric conversion portion is associated with a light of a different wavelength from the exposed-type photoelectric conversion portion. ### Claim 17 (depends on 14) The imaging device according to claim 14, wherein the exposed-type photoelectric conversion portion and the embedded-type photoelectric conversion portion are connected to a protective insulating film, wherein a plurality of pixel electrodes are on or above the protective insulating film. ### Claim 18 (depends on 17) The imaging device according to claim 17, wherein each pixel electrode of the plurality of pixel electrodes comprises a transparent conductive film.