# US 2018/0027157 A1 · Solid-state imaging device and method for manufacturing the same, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0027157 A1 - Document ID: US20180027157A1 - Status: Published application - Kind: A1 - Application number: 15/720,993 - Filed: 2017-09-29 - Published: 2018-01-25 - Earliest claimed: 2013-07-03 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yoshiaki MASUDA; Yuki MIYANAMI; Hideshi ABE; Tomoyuki HIRANO; Masanari YAMAGUCHI; Yoshiki EBIKO; Kazufumi WATANABE; Tomoharu OGITA - Web page: https://patentgrep.com/patent/US20180027157A1 ## CPC - H04N 25/633: by using optical black pixels - G02B 1/118: having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures - H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof - H04N 25/17: Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location - H04N 25/62: Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/8067: {Reflectors} - H10F 39/807: {Pixel isolation structures} - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type. ## Claims ### Claim at position 1 1-16. (canceled) ### Claim 17 A solid-state imaging device, comprising: a semiconductor substrate; a first photoelectric conversion region and a second photoelectric conversion region located in the semiconductor substrate; an anti-reflection portion including a structure having recessed portions and projecting portions provided on a boundary surface on a light-receiving surface side of the first photoelectric conversion region and the second photoelectric conversion region; and an inter-pixel light blocking portion arranged between the first photoelectric conversion region and the second photoelectric conversion region. ### Claim 18 (depends on 17) The solid-state imaging device according to claim 17, wherein the inter pixel light-blocking portion has a trench structure. ### Claim 19 (depends on 18) The solid-state imaging device according to claim 18, further comprising: a transparent insulation film, wherein the transparent insulation film is disposed above the first photoelectric conversion region and the second photoelectric conversion region, and wherein the transparent insulation film is disposed between the first photoelectric conversion region and the second photoelectric conversion region. ### Claim 20 (depends on 19) The solid-state imaging device according to claim 19, further comprising: a pinning layer disposed above the first photoelectric conversion region and the second photoelectric conversion region, wherein the pinning layer is disposed in accordance with the structure having recessed portions and projecting portions. ### Claim 21 (depends on 19) The solid-state imaging device according to claim 19, further comprising: a light-blocking film disposed over the transparent insulation film. ### Claim 22 (depends on 21) The solid-state imaging device according to claim 21, wherein the light-blocking film includes one of a tungsten, aluminum and copper. ### Claim 23 (depends on 17) The solid-state imaging device according to claim 17, wherein the anti-reflection portion is located at a central area of the pixel in a region corresponding to a predetermined percentage of a pixel region. ### Claim 24 (depends on 17) The solid-state imaging device according to claim 17, wherein the anti-reflection portion is located at the central area of the pixel in a region corresponding to 80% of the pixel region. ### Claim 25 (depends on 17) The solid-state imaging device according to claim 17, wherein a groove width of the inter-pixel light-blocking portion is equal to or more than 40 nm. ### Claim 26 (depends on 17) The solid-state imaging device according to claim 17, further comprising: a flat portion provided between the pixels on the boundary surface on the light-receiving surface side, wherein the flat portion is provided next to the inter-pixel light-blocking portion. ### Claim 27 (depends on 17) The solid-state imaging device according to claim 17, further comprising: a pinning film including an oxide, wherein the pinning film is disposed above the first photoelectric conversion region and the second photoelectric conversion region. ### Claim 28 (depends on 27) The solid-state imaging device according to claim 27, wherein the pinning film includes one of an oxide of hafnium, zirconium and tantalum element. ### Claim 29 (depends on 27) The solid-state imaging device according to claim 27, further comprising: a transparent insulation film disposed above the pinning film. ### Claim 30 (depends on 29) The solid-state imaging device according to claim 29, wherein the transparent insulation film includes an oxide of silicon element. ### Claim 31 (depends on 17) The solid-state imaging device according to claim 17, further comprising: an oxide film disposed above the first photoelectric conversion region and the second photoelectric conversion region. ### Claim 32 (depends on 31) The solid-state imaging device according to claim 31, further comprising: a transparent insulation film disposed above the oxide film. ### Claim 33 (depends on 32) The solid-state imaging device according to claim 32, wherein the transparent insulation film includes an oxide of silicon element. ### Claim 34 (depends on 31) The solid-state imaging device according to claim 31, further comprising: an anti-reflection film disposed above the oxide film. ### Claim 35 (depends on 34) The solid-state imaging device according to claim 34, wherein the anti-reflection film is different material of the oxide film. ### Claim 36 (depends on 34) The solid-state imaging device according to claim 34, wherein the anti-reflection film includes one of an oxide of tantalum and titanium element. ### Claim 37 (depends on 36) The solid-state imaging device according to claim 36, further comprising: a transparent insulation film disposed above the anti-reflection film. ### Claim 38 (depends on 37) The solid-state imaging device according to claim 37, wherein the transparent insulation film includes an oxide of silicon element. ### Claim 39 An electronic apparatus, comprising: a solid-state imaging device that includes: a semiconductor substrate; a first photoelectric conversion region and a second photoelectric conversion region located in the semiconductor substrate; an anti-reflection portion including a structure having recessed portions and projecting portions provided on a boundary surface on a light-receiving surface side of the first photoelectric conversion region and the second photoelectric conversion region; and an inter-pixel light blocking portion arranged between the first photoelectric conversion region and the second photoelectric conversion region.