# US 2018/0026671 A1 · High-frequency switch module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026671 A1 - Document ID: US20180026671A1 - Status: Published application - Kind: A1 - Application number: 15/669,140 - Filed: 2017-08-04 - Published: 2018-01-25 - Earliest claimed: 2015-02-05 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Takanori Uejima - Web page: https://patentgrep.com/patent/US20180026671A1 ## CPC - H04B 1/48: in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter {(H04B1/46 takes precedence)} - H03H 7/0115: {comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence)} - H03H 7/465: {having variable circuit topology, e.g. including switches} - H04B 1/00: Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission - H04B 1/006: {using switches for selecting the desired band (H04B1/0057 takes precedence)} - H04B 1/0064: {with separate antennas for the more than one band (H04B1/0053 takes precedence)} - H04B 1/0458: {Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H)} - H04B 1/18: Input circuits, e.g. for coupling to an antenna or a transmission line (coupling networks between antennas or lines and receivers independent of the nature of the receiver H03H) - H04B 1/50: using different frequencies for the two directions of communication - H03H 2001/0085: {Multilayer, e.g. LTCC, HTCC, green sheets} - H03H 2007/013: {Notch or bandstop filters} - H04B 2001/485: {inhibiting unwanted transmission} - H04B: TRANSMISSION - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) ## Abstract A high-frequency switch module (10) includes a switch element (20) and an inductor (30). The switch element (20) includes a Hi band common terminal (P10), a Low band common terminal (P20), a plurality of selection target terminals (P11 to P14) that are selectively connected to the common terminal (P10), and a plurality of selection target terminals (P21 to P24) that are selectively connected to the common terminal (P20). The inductor (30) is connected between a first selection target terminal (P14) of the selection target terminals (P11 to P14) and a selection target terminal (P21) of the selection target terminals (P21 to P24). The selection target terminal (P14) and the selection target terminal (P21) are simultaneously used terminals that are used for electric paths through which transmission or reception using a plurality of communication bands is performed at the same time. ## Claims ### Claim 1 A high-frequency switch module comprising: a switch element including a first common terminal connected to a Hi band antenna, a second common terminal connected to a Low band antenna, a plurality of first selection target terminals selectively connected to the first common terminal, and a plurality of second selection target terminals selectively connected to the second common terminal; and an inductor connected between one of the plurality of first selection target terminals and one of the plurality of second selection target terminals. ### Claim 2 (depends on 1) The high-frequency switch module according to claim 1, wherein the first selection target terminal and the second selection target terminal connected to the inductor are simultaneously used terminals used for electric paths through which simultaneous transmission or simultaneous reception using a plurality of communication bands is performed. ### Claim 3 (depends on 2) The high-frequency switch module according to claim 2, further comprising: a circuit substrate at which the switch element and the inductor are mounted, wherein a first connection conductor connecting the first selection target terminal as the simultaneously used terminal to the inductor and a second connection conductor connecting the second selection target terminal as the simultaneously used terminal to the inductor are formed at the circuit substrate, wherein the first connection conductor and the second connection conductor are arranged at positions different in a thickness direction of the circuit substrate, and wherein the circuit substrate includes an inner-layer ground conductor between the first connection conductor and the second connection conductor. ### Claim 4 (depends on 2) The high-frequency switch module according to claim 2, wherein the switch element includes a third selection target terminal between the first selection target terminal as the simultaneously used terminal and the second selection target terminal as the simultaneously used terminal, the third selection target terminal using a communication band different from the plurality of communication bands used by the simultaneously used terminals. ### Claim 5 (depends on 2) The high-frequency switch module according to claim 2, further comprising: a capacitor connected in parallel with the inductor. ### Claim 6 (depends on 2) The high-frequency switch module according to claim 2, further comprising: a first RF terminal connected to the first selection target terminal as the simultaneously used terminal, and a first connection conductor connecting the first RF terminal to the first selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the first selection target terminal as the simultaneously used terminal and the inductor at the first connection conductor. ### Claim 7 (depends on 2) The high-frequency switch module according to claim 2, further comprising: a second RF terminal connected to the second selection target terminal as the simultaneously used terminal, and a second connection conductor connecting the second RF terminal to the second selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the inductor and the second RF terminal at the second connection conductor. ### Claim 8 (depends on 2) The high-frequency switch module according to claim 2, wherein the inductor is a conductive pattern in a spiral shape provided at a circuit substrate, and wherein a ground conductor provided inside the circuit substrate and close to the inductor has a shape not overlapping with a cavity at the center of the spiral shape. ### Claim 9 (depends on 3) The high-frequency switch module according to claim 3, wherein the switch element includes a third selection target terminal between the first selection target terminal as the simultaneously used terminal and the second selection target terminal as the simultaneously used terminal, the third selection target terminal using a communication band different from the plurality of communication bands used by the simultaneously used terminals. ### Claim 10 (depends on 3) The high-frequency switch module according to claim 3, further comprising: a capacitor connected in parallel with the inductor. ### Claim 11 (depends on 4) The high-frequency switch module according to claim 4, further comprising: a capacitor connected in parallel with the inductor. ### Claim 12 (depends on 3) The high-frequency switch module according to claim 3, further comprising: a first RF terminal connected to the first selection target terminal as the simultaneously used terminal, and a first connection conductor connecting the first RF terminal to the first selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the first selection target terminal as the simultaneously used terminal and the inductor at the first connection conductor. ### Claim 13 (depends on 4) The high-frequency switch module according to claim 4, further comprising: a first RF terminal connected to the first selection target terminal as the simultaneously used terminal, and a first connection conductor connecting the first RF terminal to the first selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the first selection target terminal as the simultaneously used terminal and the inductor at the first connection conductor. ### Claim 14 (depends on 5) The high-frequency switch module according to claim 5, further comprising: a first RF terminal connected to the first selection target terminal as the simultaneously used terminal, and a first connection conductor connecting the first RF terminal to the first selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the first selection target terminal as the simultaneously used terminal and the inductor at the first connection conductor. ### Claim 15 (depends on 3) The high-frequency switch module according to claim 3, further comprising: a second RF terminal connected to the second selection target terminal as the simultaneously used terminal, and a second connection conductor connecting the second RF terminal to the second selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the inductor and the second RF terminal at the second connection conductor. ### Claim 16 (depends on 4) The high-frequency switch module according to claim 4, further comprising: a second RF terminal connected to the second selection target terminal as the simultaneously used terminal, and a second connection conductor connecting the second RF terminal to the second selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the inductor and the second RF terminal at the second connection conductor. ### Claim 17 (depends on 5) The high-frequency switch module according to claim 5, further comprising: a second RF terminal connected to the second selection target terminal as the simultaneously used terminal, and a second connection conductor connecting the second RF terminal to the second selection target terminal as the simultaneously used terminal, wherein a matching inductor is connected between the inductor and the second RF terminal at the second connection conductor. ### Claim 18 (depends on 3) The high-frequency switch module according to claim 3, wherein the inductor is a conductive pattern in a spiral shape provided at a circuit substrate, and wherein a ground conductor provided inside the circuit substrate and close to the inductor has a shape not overlapping with a cavity at the center of the spiral shape. ### Claim 19 (depends on 4) The high-frequency switch module according to claim 4, wherein the inductor is a conductive pattern in a spiral shape provided at a circuit substrate, and wherein a ground conductor provided inside the circuit substrate and close to the inductor has a shape not overlapping with a cavity at the center of the spiral shape. ### Claim 20 (depends on 5) The high-frequency switch module according to claim 5, wherein the inductor is a conductive pattern in a spiral shape provided at a circuit substrate, and wherein a ground conductor provided inside the circuit substrate and close to the inductor has a shape not overlapping with a cavity at the center of the spiral shape.