# US 2018/0026635 A1 · Voltage level translation circuit and multiple interface in communication system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026635 A1 - Document ID: US20180026635A1 - Status: Published application - Kind: A1 - Application number: 15/252,618 - Filed: 2016-08-31 - Published: 2018-01-25 - Earliest claimed: 2016-07-25 - Assignees: Ambit Microsystems (Shanghai) Ltd.; Hon Hai Precision Industry Co., Ltd. - Applicants: Ambit Microsystems (Shanghai) Ltd.; Hon Hai Precision Industry Co., Ltd. - Inventors: YU-HU YAN - Web page: https://patentgrep.com/patent/US20180026635A1 ## CPC - H03K 19/017518: {using a combination of bipolar and field effect transistors [BIFET]} - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A voltage level translation circuit includes a first energy storage unit, a second energy storage unit, a first voltage level translation unit, and a second voltage level translation unit. The first voltage level translation unit is configured to translate a first communication interface transmitting pin voltage signal to realize a first communication between a first communication interface transmitting pin and a second communication interface receiving pin. The second voltage level translation unit is configured to translate a second communication interface transmitting pin voltage signal to realize a second communication between a second communication interface transmitting pin and a first communication interface receiving pin. A multiple interface communication system is also provided. ## Claims ### Claim 1 A voltage level translation circuit comprising: a first energy storage unit, coupled to a first communication interface transmitting pin, configured to store energy according to a first communication interface transmitting pin voltage signal; a second energy storage unit, coupled to a second communication interface transmitting pin, configured to store energy according to a second communication interface transmitting pin voltage signal; a first voltage level translation unit, coupled to the first communication interface transmitting pin, a second communication interface receiving pin, the first energy storage unit, and the second energy storage unit; the first voltage level translation unit configured to translate the first communication interface transmitting pin voltage signal to realize a first communication between the first communication interface transmitting pin and the second communication interface receiving pin; and a second voltage level translation unit, coupled to the second communication interface transmitting pin, a first communication interface receiving pin, the first energy storage unit, and the second energy storage unit; the second voltage level translation unit configured to translate the second communication interface transmitting pin voltage signal to realize a second communication between the second communication interface transmitting pin and the first communication interface receiving pin. ### Claim 2 (depends on 1) The voltage level translation circuit of claim 1, wherein the first energy storage unit comprises a first diode and a first capacitor, and the second energy storage unit comprises a second diode and a second capacitor; and a first diode anode is coupled to the first communication interface transmitting pin, a first diode cathode is coupled to a first capacitor first terminal, a first capacitor second terminal is grounded, a second diode anode is coupled to the second communication interface transmitting pin, a second diode cathode is coupled to a second capacitor first terminal, and a second capacitor second terminal is grounded. ### Claim 3 (depends on 1) The voltage level translation circuit of claim 1, wherein the first voltage level translation unit comprises: a first metal oxide semiconductor field effect transistor (MOSFET), a first MOSFET gate electrode coupled to the first energy storage unit, and a first MOSFET source electrode coupled to the first communication interface transmitting pin; a third diode, a third diode anode coupled to the first MOSFET source electrode, and a third diode cathode coupled to a first MOSFET drain electrode; a second MOSFET, a second MOSFET gate electrode coupled to the second energy storage unit, a second MOSFET source electrode coupled to the second communication interface receiving pin, and a second MOSFET drain electrode coupled to the first MOSFET drain electrode; and a fourth diode, a fourth diode anode coupled to the second MOSFET source electrode, and a fourth diode cathode coupled to the second MOSFET drain electrode; and the second voltage level translation unit comprises: a third MOSFET, a third MOSFET gate electrode coupled to the second energy storage unit, and a third MOSFET source electrode coupled to the second communication interface transmitting pin; a fifth diode, a fifth diode anode coupled to the third MOSFET source electrode, and a fifth diode cathode coupled to a third MOSFET drain electrode; a fourth MOSFET, a fourth MOSFET gate electrode coupled to the first energy storage unit, a fourth MOSFET source electrode coupled to the first communication interface receiving pin, and a fourth MOSFET drain electrode coupled to the third MOSFET drain electrode; and a sixth diode, a sixth diode anode coupled to the fourth MOSFET source electrode, and a sixth diode cathode coupled to the fourth MOSFET drain electrode. ### Claim 4 (depends on 3) The voltage level translation circuit of claim 3, wherein the first voltage level translation unit further comprises a first resistor; and the first resistor is coupled between the second MOSFET source electrode and the second MOSFET gate electrode; the second voltage level translation unit further comprises a second resistor; and the second resistor is coupled between the fourth MOSFET source electrode and the fourth MOSFET gate electrode. ### Claim 5 (depends on 1) The voltage level translation circuit of claim 1, further comprising a first voltage level raising unit, the first voltage level raising unit coupled to the first voltage level translation unit and configured to raise the first communication interface transmitting pin voltage signal to shorten a second communication interface receiving pin voltage signal rise time. ### Claim 6 (depends on 5) The voltage level translation circuit of claim 5, wherein the first voltage level raising unit comprises: a third capacitor, and a third capacitor first terminal coupled to the first communication interface transmitting pin; a third resistor, a third resistor first terminal coupled to a third capacitor second terminal, and a third resistor second terminal grounded; a first transistor, a first transistor control terminal coupled to the third capacitor second terminal, and a first transistor second terminal grounded; and a second transistor, a second transistor control terminal coupled to a first transistor first terminal, a second transistor first terminal coupled to the second communication interface receiving pin, and a second transistor second terminal coupled to the first voltage level translation unit. ### Claim 7 (depends on 6) The voltage level translation circuit of claim 6, further comprising a second voltage level raising unit, the second voltage level raising unit coupled to the second voltage level translation unit and configured to raise the second communication interface transmitting pin voltage signal to shorten a first communication interface receiving pin voltage signal rise time. ### Claim 8 (depends on 7) The voltage level translation circuit of claim 7, wherein the second voltage level raising unit comprises: a fourth capacitor, and a fourth capacitor first terminal coupled to the second communication interface transmitting pin; a fourth resistor, a fourth resistor first terminal coupled to a fourth capacitor second terminal, and a fourth resistor second terminal grounded; a third transistor, a third transistor control terminal coupled to the fourth capacitor second terminal, and a third transistor second terminal grounded; and a fourth transistor, a fourth transistor control terminal coupled to a third transistor first terminal, a fourth transistor first terminal coupled to the first communication interface receiving pin, and a fourth transistor second terminal coupled to the second voltage level translation unit. ### Claim 9 (depends on 8) The voltage level translation circuit of claim 8, wherein the first transistor control terminal and the third transistor control terminal are NPN transistor bases, the first transistor first terminal and the third transistor first terminal are NPN transistor collectors, the first transistor second terminal and the third transistor second terminal are NPN transistor emitters; and the second transistor control terminal and the fourth transistor control terminal are PNP transistor bases, the second transistor first terminal and the fourth transistor first terminal are PNP transistor collectors, and the second transistor second terminal and the fourth transistor second terminal are PNP transistor emitters. ### Claim 10 A multiple interface communication system, comprising: a first communication interface; a second communication interface; and a voltage level translation circuit comprising: a first energy storage unit, coupled to a first communication interface transmitting pin, configured to store energy according to a first communication interface transmitting pin voltage signal; a second energy storage unit, coupled to a second communication interface transmitting pin, configured to store energy according to a second communication interface transmitting pin voltage signal; a first voltage level translation unit, coupled to the first communication interface transmitting pin, a second communication interface receiving pin, the first energy storage unit, and the second energy storage unit; the first voltage level translation unit configured to translate the first communication interface transmitting pin voltage signal to realize a first communication between the first communication interface transmitting pin and the second communication interface receiving pin; and a second voltage level translation unit, coupled to the second communication interface transmitting pin, a first communication interface receiving pin, the first energy storage unit, and the second energy storage unit; the second voltage level translation unit configured to translate the second communication interface transmitting pin voltage signal to realize a second communication between the second communication interface transmitting pin and the first communication interface receiving pin. ### Claim 11 (depends on 10) The multiple interface communication system of claim 10, wherein the first energy storage unit comprises a first diode and a first capacitor, and the second energy storage unit comprises a second diode and a second capacitor; and a first diode anode is coupled to the first communication interface transmitting pin, a first diode cathode is coupled to a first capacitor first terminal, a first capacitor second terminal is grounded, a second diode anode is coupled to the second communication interface transmitting pin, a second diode cathode is coupled to a second capacitor first terminal, and a second capacitor second terminal is grounded. ### Claim 12 (depends on 10) The multiple interface communication system of claim 10, wherein the first voltage level translation unit comprises: a first metal oxide semiconductor field effect transistor (MOSFET), a first MOSFET gate electrode coupled to the first energy storage unit, and a first MOSFET source electrode coupled to the first communication interface transmitting pin; a third diode, a third diode anode coupled to the first MOSFET source electrode, and a third diode cathode coupled to a first MOSFET drain electrode; a second MOSFET, a second MOSFET gate electrode coupled to the second energy storage unit, a second MOSFET source electrode coupled to the second communication interface receiving pin, and a second MOSFET drain electrode coupled to the first MOSFET drain electrode; and a fourth diode, a fourth diode anode coupled to the second MOSFET source electrode, and a fourth diode cathode coupled to the second MOSFET drain electrode; the second voltage level translation unit comprises: a third MOSFET, a third MOSFET gate electrode coupled to the second energy storage unit, and a third MOSFET source electrode coupled to the second communication interface transmitting pin; a fifth diode, a fifth diode anode coupled to the third MOSFET source electrode, and a fifth diode cathode coupled to a third MOSFET drain electrode; a fourth MOSFET, a fourth MOSFET gate electrode coupled to the first energy storage unit, a fourth MOSFET source electrode coupled to the first communication interface receiving pin, and a fourth MOSFET drain electrode coupled to the third MOSFET drain electrode; and a sixth diode, a sixth diode anode coupled to the fourth MOSFET source electrode, and a sixth diode cathode coupled to the fourth MOSFET drain electrode. ### Claim 13 (depends on 12) The multiple interface communication system of claim 12, wherein the first voltage level translation unit further comprises a first resistor; and the first resistor is coupled between the second MOSFET source electrode and the second MOSFET gate electrode; the second voltage level translation unit further comprises a second resistor; and the second resistor is coupled between the fourth MOSFET source electrode and the fourth MOSFET gate electrode. ### Claim 14 (depends on 10) The multiple interface communication system of claim 10, wherein the voltage level translation circuit further comprises a first voltage level raising unit, the first voltage level raising unit is coupled to the first voltage level translation unit and configured to raise the first communication interface transmitting pin voltage signal to shorten a second communication interface receiving pin voltage signal rise time. ### Claim 15 (depends on 14) The multiple interface communication system of claim 14, wherein the first voltage level raising unit comprises: a third capacitor, and a third capacitor first terminal coupled to the first communication interface transmitting pin; a third resistor, a third resistor first terminal coupled to a third capacitor second terminal, and a third resistor second terminal grounded; a first transistor, a first transistor control terminal coupled to the third capacitor second terminal, and a first transistor second terminal grounded; and a second transistor, a second transistor control terminal coupled to a first transistor first terminal, a second transistor first terminal coupled to the second communication interface receiving pin, and a second transistor second terminal coupled to the first voltage level translation unit. ### Claim 16 (depends on 15) The multiple interface communication system of claim 15, wherein the voltage level translation circuit further comprises a second voltage level raising unit, the second voltage level raising unit is coupled to the second voltage level translation unit and configured to raise the second communication interface transmitting pin voltage signal to shorten a first communication interface receiving pin voltage signal rise time. ### Claim 17 (depends on 16) The multiple interface communication system of claim 16, wherein the second voltage level raising unit comprises: a fourth capacitor, and a fourth capacitor first terminal coupled to the second communication interface transmitting pin; a fourth resistor, a fourth resistor first terminal coupled to a fourth capacitor second terminal, and a fourth resistor second terminal grounded; a third transistor, a third transistor control terminal coupled to the fourth capacitor second terminal, and a third transistor second terminal grounded; and a fourth transistor, a fourth transistor control terminal coupled to a third transistor first terminal, a fourth transistor first terminal coupled to the first communication interface receiving pin, and a fourth transistor second terminal coupled to the second voltage level translation unit. ### Claim 18 (depends on 17) The multiple interface communication system of claim 17, wherein the first transistor control terminal and the third transistor control terminal are NPN transistor bases, the first transistor first terminal and the third transistor first terminal are NPN transistor collectors, the first transistor second terminal and the third transistor second terminal are NPN transistor emitters; and the second transistor control terminal and the fourth transistor control terminal are PNP transistor bases, the second transistor first terminal and the fourth transistor first terminal are PNP transistor collectors, and the second transistor second terminal and the fourth transistor second terminal are PNP transistor emitters.