# US 2018/0026424 A1 · Electroabsorption Modulator Integrated Distributed Feedback Laser with Integrated Semiconductor Optical Amplifier, and Driving Method for Same

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- Number: US 2018/0026424 A1
- Document ID: US20180026424A1
- Status: Published application
- Kind: A1
- Application number: 15/547,886
- Filed: 2016-02-16
- Published: 2018-01-25
- Earliest claimed: 2015-02-23
- Assignees: Nippon Telegraph and Telephone Corporation
- Applicants: Nippon Telegraph and Telephone Corporation
- Inventors: Wataru Kobayashi; Toshio Ito
- Web page: https://patentgrep.com/patent/US20180026424A1

## CPC

- H01S 5/042: Electrical excitation {; Circuits therefor (monolithically integrated laser drive components H01S5/0261)}
- H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06)
- H01S 5/0265: {Intensity modulators (intra-cavity modulators H01S5/0625)}
- H01S 5/0622: {Controlling the frequency of the radiation}
- H01S 5/06253: {Pulse modulation}
- H01S 5/12: the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18)
- H01S 5/50: Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- G02B 6/12: of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00)
- G02F 1/00: Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- H01S 5/0085: {for modulating the output, i.e. the laser beam is modulated outside the laser cavity}
- H01S 5/4031: {Edge-emitting structures}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

The present invention relates to a driving method for an SOA integrated EA-DFB laser monolithically-integrating a DFB laser portion, an EA modulator portion and an SOA portion, on a same substrate, wherein an electric current ISOA is injected into the SOA portion within a range of a power consumption not exceeding a total amount of a power consumption eliminated in the DFB laser portion of the SOA integrated EA-DFB laser and a power consumption eliminated in the EA modulator portion of the SOA integrated EA-DFB laser by eliminating an elimination amount ΔIDFB from a maximum injection electric current into a DFB laser portion of an EA-DFB laser allowable in a case of mounting the EA-DFB laser on an optical transmission module.

## Claims

### Claim 1

A driving method for an SOA integrated EA-DFB laser, the SOA integrated EA-DFB laser monolithically-integrating a DFB laser portion, an EA modulator portion provided in the latter part of the DFB laser portion and an SOA portion provided in the latter part of the EA modulator portion, on a same substrate, comprising:
injecting an electric current ISOA into the SOA portion within a range of a power consumption not exceeding a total amount of a power consumption eliminated in the DFB laser portion of the SOA integrated EA-DFB laser and a power consumption eliminated in the EA modulator portion of the SOA integrated EA-DFB laser by eliminating an elimination amount ΔIDFB from a maximum injection electric current into a DFB laser portion of an EA-DFB laser allowable in a case of mounting the EA-DFB laser on an optical transmission module.

### Claim 2 (depends on 1)

The driving method according to claim 1, wherein when a length of the SOA portion in regard to an optical waveguide direction is indicated at LSOA, the electric current is injected into the SOA portion within a range in which ISOA=115 [mA/mm]×LSOA [mm]+10 [mA]±ΔIDFB/2 [mA] for the driving.

### Claim 3 (depends on 1)

The driving method according to claim 1, wherein the electric current is injected into the DFB laser portion and the SOA portion in the SOA integrated EA-DFB laser from a same control terminal, and
a length of each of the DFB laser portion and the SOA portion in the SOA integrated EA-DFB laser in regard to an optical waveguide direction is designed to satisfy that ISOA=115 [mA/mm]×LSOA [mm]+10 [mA]±ΔIDFB/2 [mA].

### Claim 4 (depends on 1)

The driving method according to claim 1, wherein a length of the SOA portion in regard to an optical waveguide direction is from 50 μm to 150 μm.

### Claim 5

An SOA integrated EA-DFB laser in which an SOA portion is integrated in an emitting end of an EA-DFB laser including a DFB laser portion and an EA modulator portion,
wherein an electric current ISOA is injected into the SOA portion within a range of a power consumption not exceeding a total amount of a power consumption eliminated in the DFB laser portion of the SOA integrated EA-DFB laser and a power consumption eliminated in the EA modulator portion of the SOA integrated EA-DFB laser by eliminating an elimination amount ΔIDFB from a maximum injection electric current into a DFB laser portion of an EA-DFB laser allowable in a case of mounting the EA-DFB laser on an optical transmission module.

### Claim 6 (depends on 5)

The SOA integrated EA-DFB laser according to claim 5, wherein when a length of the SOA portion in regard to an optical waveguide direction is indicated at LSOA, the electric current is injected into the SOA portion within a range in which ISOA=115 [mA/mm]×LSOA [mm]+10 [mA]±ΔIDFB/2 [mA].

### Claim 7 (depends on 5)

The SOA integrated EA-DFB laser according to claim 5, wherein the electric current is injected into the DFB laser portion and the SOA portion in the SOA integrated EA-DFB laser from a same control terminal, and
a length of each of the DFB laser portion and the SOA portion in the SOA integrated EA-DFB laser in regard to an optical waveguide direction is designed to satisfy that ISOA=115 [mA/mm]×LSOA [mm]+10 [mA]±ΔIDFB/2 [mA].

### Claim 8 (depends on 5)

The SOA integrated EA-DFB laser according to claim 5, wherein a length of the SOA portion in regard to an optical waveguide direction is from 50 μm to 150 μm.