# US 2018/0026420 A1 · Media Access Control MAC Chip and Terminal Device

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- Number: US 2018/0026420 A1
- Document ID: US20180026420A1
- Status: Published application
- Kind: A1
- Application number: 15/548,417
- Filed: 2016-01-18
- Published: 2018-01-25
- Earliest claimed: 2015-02-05
- Assignees: Zte Corporation
- Applicants: Zte Corporation
- Inventors: Ying WANG; Zhiming FU; Mingsheng LI
- Web page: https://patentgrep.com/patent/US20180026420A1

## CPC

- H01S 5/0261: {Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence)}
- G01J 1/0209: {Monolithic}
- G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)}
- H01S 5/02325: Mechanically integrated components on mount members or optical micro-benches
- H01S 5/0236: using an adhesive
- H04B 10/40: Transceivers
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H01S 5/3013: {AIIIBV compounds}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H04B: TRANSMISSION
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present disclosure discloses a Media Access Control (MAC) chip and a terminal device. The MAC chip includes a silicon substrate layer (1), a silicon dioxide base layer (2) formed on a surface of the silicon substrate layer (1), and a silicon base layer (3) formed on a surface, away from the silicon substrate layer, of the silicon dioxide base layer (1); and an element layer (4) formed on a surface, away from the silicon dioxide base layer (2), of the silicon base layer (3), and herein the element layer (4) includes a laser (41), a passive device (42), a detector (43), a drive circuit (44) and an MAC chip body (45), herein the drive circuit (44) is respectively connected with the laser (41), the detector (43) and the MAC chip body (45), and the laser (41) is connected with the detector (43) through the passive device (42).

## Claims

### Claim 1

A Media Access Control, MAC, chip, comprising:
a silicon substrate layer, a silicon dioxide base layer formed on a surface of the silicon substrate layer and a silicon base layer formed on a surface, away from the silicon substrate layer, of the silicon dioxide base layer; and
an element layer formed on a surface, away from the silicon dioxide base layer, of the silicon base layer, wherein the element layer comprises a laser, a passive device, a detector, a drive circuit and an MAC chip body;
wherein the drive circuit is respectively connected with the laser, the detector and the MAC chip body, and the laser is connected with the detector through the passive device.

### Claim 2 (depends on 1)

The MAC chip according to claim 1, wherein the laser is an III-V laser.

### Claim 3 (depends on 1)

The MAC chip according to claim 1, wherein the drive circuit comprises:
a laser drive circuit respectively connected with the MAC chip body and the laser.

### Claim 4 (depends on 3)

The MAC chip according to claim 3, wherein the drive circuit further comprises:
an amplification circuit connected with the detector; and
a filter circuit respectively connected with the MAC chip body and the amplification circuit.

### Claim 5 (depends on 1)

The MAC chip according to claim 1, wherein the passive device, the detector, the drive circuit and the MAC chip body are respectively formed on the silicon base layer by adopting a silicon material growth mode.

### Claim 6 (depends on 1)

The MAC chip according to claim 1, wherein the laser is formed on the silicon base layer by adopting a bonding mode.

### Claim 7 (depends on 1)

The MAC chip according to claim 1, wherein the silicon dioxide base layer is formed on the silicon substrate layer by adopting a silicon material growth mode; and the silicon base layer is formed on the silicon dioxide base layer by adopting the silicon material growth mode.

### Claim 8 (depends on 1)

The MAC chip according to claim 1, wherein the laser, the passive device, the detector, the drive circuit and the MAC chip body are uniformly distributed on the silicon base layer according to a preset mode.

### Claim 9 (depends on 1)

A terminal device, comprising the MAC chip according to claim 1.

### Claim 10 (depends on 2)

A terminal device, comprising the MAC chip according to claim 2.

### Claim 11 (depends on 3)

A terminal device, comprising the MAC chip according to claim 3.

### Claim 12 (depends on 4)

A terminal device, comprising the MAC chip according to claim 4.

### Claim 13 (depends on 5)

A terminal device, comprising the MAC chip according to claim 5.

### Claim 14 (depends on 6)

A terminal device, comprising the MAC chip according to claim 6.

### Claim 15 (depends on 7)

A terminal device, comprising the MAC chip according to claim 7.

### Claim 16 (depends on 8)

A terminal device, comprising the MAC chip according to claim 8.