# US 2018/0026216 A1 · Photoelectric conversion device and method of manufacturing the same

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- Number: US 2018/0026216 A1
- Document ID: US20180026216A1
- Status: Published application
- Kind: A1
- Application number: 15/679,286
- Filed: 2017-08-17
- Published: 2018-01-25
- Earliest claimed: 2015-03-30
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Haruhi OOOKA; Atsuko llDA; Hideyuki NAKAO; Kenji TODORI; Takeshi GOTANDA
- Web page: https://patentgrep.com/patent/US20180026216A1

## CPC

- H10K 71/15: characterised by the solvent used
- H10K 30/30: comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K 30/50: Photovoltaic [PV] devices
- H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene}
- H10K 85/151: {Copolymers}
- H10K 85/211: {Fullerenes, e.g. C60}
- H10K 2102/103: {comprising indium oxides, e.g. ITO}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2 (1) Here, n: 1 to 20, and R1, R2: halogen or SH

## Claims

### Claim 1

A method of manufacturing a photoelectric conversion device, comprising:
preparing a substrate;
forming a layer on the substrate, the layer including a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1); and
drying the layer under a pressure of 100 Pa or less and a substrate temperature of 40 to 200° C.;
R1—(CH2)n—R2 (1)
n: 1 to 20
R1, R2: halogen or SH.

### Claim 2 (depends on 1)

The method of claim 1,
wherein the forming the layer includes:
forming a mixture of the p-type semiconductor, the n-type semiconductor, the compound, and a solvent; and
applying the mixture on the substrate to form the layer wherein the drying the layer includes evaporating the solvent in the layer.

### Claim 3 (depends on 1)

The method of claim 1,
wherein the pressure is 1×10−3 Pa or less and the temperature is 40 to 160° C.

### Claim 4 (depends on 1)

The method of claim 1,
wherein a first concentration of the compound in the formed layer is larger than a second concentration of the compound in the dried layer, the concentration is defined by the ration of the mass of the compound with respect to the total mass of the p-type semiconductor, the n-type semiconductor, and the compound.

### Claim 5 (depends on 1)

The method of claim 1,
wherein the first concentration is larger than 21.6 mass % or more and the second concentration is 0.001 mass % or more and less than 0.1 mass %.

### Claim 6 (depends on 1)

The method of claim 1,
wherein the dried layer includes a microphase-separated structure of the p-type semiconductor and the n-type semiconductor.

### Claim 7 (depends on 1)

The method of claim 1,
wherein the p-type semiconductor includes a polymer.

### Claim 8 (depends on 1)

The method of claim 1,
wherein the n-type semiconductor includes a fullerene derivative.

### Claim 9 (depends on 1)

The method of claim 1,
wherein the n of the compound is 5 to 10.

### Claim 10 (depends on 1)

The method of claim 1,
wherein the compound includes octanedithiol dibromooctane, and diiodooctane.

### Claim 11 (depends on 9)

The method of claim 9,
wherein the compound includes 1,8-diiodooctane.

### Claim 12 (depends on 1)

The method of claim 1, further comprising:
forming a first electrode layer on the substrate before the forming the layer, and
forming a second electrode layer on the layer.