# US 2018/0026186 A1 · Nanoparticle with plural functionalities, and method of forming the nanoparticle

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- Number: US 2018/0026186 A1
- Document ID: US20180026186A1
- Status: Published application
- Kind: A1
- Application number: 15/691,800
- Filed: 2017-08-31
- Published: 2018-01-25
- Earliest claimed: 2016-06-29
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Qing CAO; Kangguo CHENG; Zhengwen LI; Fei LIU
- Web page: https://patentgrep.com/patent/US20180026186A1

## CPC

- H10N 97/00: Electric solid-state thin-film or thick-film devices, not otherwise provided for
- A61K 9/143: {with inorganic compounds}
- B82Y 5/00: Nanobiotechnology or nanomedicine, e.g. protein engineering or drug delivery
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3461: {Nanoparticles}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 95/11: {Separation of active layers from substrates}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- A61K: PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES (devices or methods specially adapted for bringing pharmaceutical products into particular physical or administering forms A61J3/00; chemical aspects of, or use of materials for deodorisation of air, for disinfection or sterilisation, or for bandages, dressings, absorbent pads or surgical articles A61L; soap compositions C11D)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of forming a nanoparticle includes forming a layer of semiconductor material on a substrate, forming a first layer on the semiconductor material, and etching the semiconductor layer to form the nanoparticle including the first layer on a first side of the nanoparticle and the semiconductor material on a second side of the nanoparticle.

## Claims

### Claim 1

A method of forming a nanoparticle, comprising:
forming a layer of semiconductor material on a substrate;
forming a first layer on the semiconductor material; and
etching the semiconductor layer to form the nanoparticle including the first layer on a first side of the nanoparticle and the semiconductor material on a second side of the nanoparticle.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first layer comprises a functionality different from a functionality of the semiconductor material.

### Claim 3 (depends on 2)

The method of claim 2, wherein the etching of the semiconductor layer comprises:
patterning the layer of semiconductor material to form a pillar of the semiconductor material; and
separating the pillar from the substrate to form the nanoparticle.

### Claim 4 (depends on 3)

The method of claim 3, wherein the patterning of the layer of semiconductor material comprises:
a first etch to form a plurality of strips of the semiconductor material.

### Claim 5 (depends on 4)

The method of claim 4, wherein the patterning of the layer of semiconductor material further comprises:
a second etch to divide the plurality of strips into the plurality of pillars of the semiconductor material.

### Claim 6 (depends on 5)

The method of claim 5, further comprising:
forming a second layer on the semiconductor material, the second layer having a functionality different from the functionality of the semiconductor material, and different from the functionality of the first layer.

### Claim 7 (depends on 6)

The method of claim 6, wherein the second layer is different from the first layer in at least one of a bonding property, an energy absorption property and a biodegradability property.

### Claim 8 (depends on 6)

The method of claim 6, wherein the forming of the second layer is performed between the first etch and the second etch, so that the second layer is formed on two faces of the nanoparticle.

### Claim 9 (depends on 6)

The method of claim 6, wherein the forming of the second layer is performed after the second etch, so that the second layer is formed on four faces of the nanoparticle.

### Claim 10 (depends on 6)

The method of claim 6, wherein the first layer comprises an insulator layer and the second layer comprises a metal layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the insulator layer comprises a silicon nitride layer and the metal layer comprises a gold layer.

### Claim 12 (depends on 3)

The method of claim 3, wherein the substrate comprises an oxide layer, and the separating of the pillar comprises etching the oxide layer.

### Claim 13 (depends on 3)

The method of claim 3, wherein the substrate comprises a semiconductor-on-insulator (SOI) substrate including a buried oxide layer, and the layer of semiconductor material is formed on the buried oxide layer.

### Claim 14 (depends on 13)

The method of claim 13, wherein the separating of the pillar from the substrate comprises undercutting the buried oxide layer by etching the buried oxide layer.

### Claim 15 (depends on 1)

The method of claim 1, wherein the semiconductor material comprises one of silicon and germanium.

### Claim 16

A nanoparticle comprising:
a cuboid base comprising a semiconductor material; and
a plurality of surfaces formed on the base and including a plurality of functionalities, respectively.

### Claim 17 (depends on 16)

The nanoparticle of claim 16, wherein the plurality of surfaces comprises a plurality of faces of the cuboid base, and the plurality of functionalities comprises a first functionality formed on a first face of the plurality of faces, and a second functionality different from the first functionality formed on a second face of the plurality of faces.

### Claim 18 (depends on 17)

The nanoparticle of claim 17, wherein the second face is different from the first face in at least one of a bonding property, an energy absorption property and a biodegradability property.

### Claim 19 (depends on 16)

The nanoparticle of claim 16, wherein the plurality of surfaces comprises a first surface including an insulator layer, a second surface including a metal layer, and a third surface including the semiconductor material.

### Claim 20 (depends on 16)

A pharmaceutical comprising the nanoparticle of claim 16.