# US 2018/0026178 A1 · Magnetoresistive device and method of forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026178 A1 - Document ID: US20180026178A1 - Status: Published application - Kind: A1 - Application number: 15/546,499 - Filed: 2016-01-20 - Published: 2018-01-25 - Earliest claimed: 2015-01-27 - Assignees: Agency for Science, Technology and Research - Applicants: Agency for Science, Technology and Research - Inventors: Michael Tran; Anibal Gonzalez; Sze Ter Lim - Web page: https://patentgrep.com/patent/US20180026178A1 ## CPC - H10N 50/10: Magnetoresistive devices - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - H01F 10/3272: {by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets} - H01F 10/3286: {Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy} - H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect} - H01F 41/302: {for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32)} - H10N 50/01: Manufacture or treatment - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G11C: STATIC STORES (semiconductor memory devices H10B) - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ## Abstract According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a free magnetic layer structure having a variable magnetization orientation, a fixed magnetic layer structure having a fixed magnetization orientation, and a tilting magnetic layer structure configured to provide an interlayer exchange biasing field to tilt, at equilibrium, the fixed magnetization orientation or the variable magnetization orientation relative to the other to be along a tilting axis that is at least substantially non-parallel to at least one of a first easy axis of the fixed magnetization orientation or a second easy axis of the variable magnetization orientation. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided. ## Claims ### Claim 1 A magnetoresistive device comprising: a free magnetic layer structure having a variable magnetization orientation; a fixed magnetic layer structure having a fixed magnetization orientation; and a tilting magnetic layer structure configured to provide an interlayer exchange biasing field to tilt, at equilibrium, the fixed magnetization orientation or the variable magnetization orientation relative to the other to be along a tilting axis that is at least substantially non-parallel to at least one of a first easy axis of the fixed magnetization orientation or a second easy axis of the variable magnetization orientation. ### Claim 2 (depends on 1) The magnetoresistive device as claimed in claim 1, wherein the tilting magnetic layer structure has a magnetization orientation along an axis that is at least substantially orthogonal to at least one of the first easy axis or the second easy axis. ### Claim 3 (depends on 1) The magnetoresistive device as claimed in claim 1, wherein each of the fixed magnetic layer structure and the free magnetic layer structure has perpendicular magnetic anisotropy. ### Claim 4 (depends on 1) The magnetoresistive device as claimed in claim 1, wherein each of the fixed magnetic layer structure and the free magnetic layer structure has in-plane magnetic anisotropy. ### Claim 5 (depends on 1) The magnetoresistive device as claimed in claim 1, wherein the tilting magnetic layer structure is interlayer exchange coupled to the free magnetic layer structure such that the interlayer exchange biasing field tilts, at equilibrium, the variable magnetization orientation of the free magnetic layer structure to be along the tilting axis. ### Claim 6 (depends on 1) The magnetoresistive device as claimed in claim 1, wherein the tilting magnetic layer structure is interlayer exchange coupled to the fixed magnetic layer structure such that the interlayer exchange biasing field tilts, at equilibrium, the fixed magnetization orientation of the fixed magnetic layer structure to be along the tilting axis. ### Claim 7 (depends on 6) The magnetoresistive device as claimed in claim 6, wherein the tilting magnetic layer structure is in contact with the fixed magnetic layer structure. ### Claim 8 (depends on 6) The magnetoresistive device as claimed in claim 6, further comprising a non-magnetic spacer layer in between the tilting magnetic layer structure and the fixed magnetic layer structure, the non-magnetic spacer layer comprising a material that enables interlayer exchange coupling between the tilting magnetic layer structure and the fixed magnetic layer structure. ### Claim 9 (depends on 1) The magnetoresistive device as claimed in claim 1, further comprising a pinning magnetic layer structure configured to pin the fixed magnetization orientation of the fixed magnetic layer structure, wherein the tilting magnetic layer structure is interlayer exchange coupled to the pinning magnetic layer structure such that the interlayer exchange biasing field tilts, at equilibrium, the fixed magnetization orientation of the fixed magnetic layer structure to be along the tilting axis. ### Claim 10 (depends on 9) The magnetoresistive device as claimed in claim 9, wherein the pinning magnetic layer structure is arranged in between the fixed magnetic layer structure and the tilting magnetic layer structure. ### Claim 11 (depends on 9) The magnetoresistive device as claimed in claim 9, wherein the pinning magnetic layer structure is arranged in contact with the fixed magnetic layer structure. ### Claim 12 (depends on 9) The magnetoresistive device as claimed in claim 9, wherein the pinning magnetic layer structure comprises a pinning magnetic layer and a compensating magnetic layer antiferromagnetically coupled to each other. ### Claim 13 (depends on 12) The magnetoresistive device as claimed in claim 12, wherein the tilting magnetic layer structure is interlayer exchange coupled to the compensating magnetic layer. ### Claim 14 (depends on 12) The magnetoresistive device as claimed in claim 12, wherein the tilting magnetic layer structure is interlayer exchange coupled to the pinning magnetic layer. ### Claim 15 (depends on 1) The magnetoresistive device as claimed in claim 1, further comprising an antiferromagnetic layer magnetically coupled to the tilting magnetic layer structure. ### Claim 16 (depends on 15) The magnetoresistive device as claimed in claim 15, wherein the antiferromagnetic layer is arranged in contact with the tilting magnetic layer structure. ### Claim 17 (depends on 1) The magnetoresistive device as claimed in claim 1, wherein the tilting magnetic layer structure comprises a synthetic antiferromagnetic structure having a first tilting magnetic layer and a second tilting magnetic layer antiferromagnetically coupled to each other. ### Claim 18 (depends on 17) The magnetoresistive device as claimed in claim 17, further comprising an antiferromagnetic layer magnetically coupled to the synthetic antiferromagnetic structure of the tilting magnetic layer structure. ### Claim 19 A method of forming a magnetoresistive device, the method comprising: forming a free magnetic layer structure having a variable magnetization orientation; forming a fixed magnetic layer structure having a fixed magnetization orientation; and forming a tilting magnetic layer structure to provide an interlayer exchange biasing field to tilt, at equilibrium, the fixed magnetization orientation or the variable magnetization orientation relative to the other to be along a tilting axis that is at least substantially non-parallel to at least one of a first easy axis of the fixed magnetization orientation or a second easy axis of the variable magnetization orientation. ### Claim 20 (depends on 19) The method as claimed in claim 19, wherein the tilting magnetic layer structure has a magnetization orientation along an axis that is at least substantially orthogonal to at least one of the first easy axis or the second easy axis.