# US 2018/0026145 A1 · Light detection device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026145 A1 - Document ID: US20180026145A1 - Status: Published application - Kind: A1 - Application number: 15/551,099 - Filed: 2015-12-14 - Published: 2018-01-25 - Earliest claimed: 2015-03-18 - Assignees: Hamamatsu Photonics K.K. - Applicants: Hamamatsu Photonics K.K. - Inventors: Shogo KAMAKURA; Ryuta YAMADA; Kenichi SATO - Web page: https://patentgrep.com/patent/US20180026145A1 ## CPC - H10F 77/933: {for devices having potential barriers} - G01J 1/02: Details - G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)} - H04N 25/70: SSIS architectures; Circuits associated therewith - H10F 30/20: the devices having potential barriers, e.g. phototransistors - H10F 30/225: the potential barrier working in avalanche mode, e.g. avalanche photodiodes - H10F 39/107: {having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays} - H10F 77/496: {Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45)} - H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80) - H10F 77/959: {for devices working in avalanche mode} - G01J 2001/4466: {Avalanche} - G01J 2001/448: {Array [CCD]} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/354: {comprising polymers} - H10W 72/5522: {comprising gold [Au]} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/932: {Plan-view shape, i.e. in top view} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N) - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole. ## Claims ### Claim 1 A photodetecting device comprising: a semiconductor photodetecting element including a semiconductor substrate in which a photodiode array including a plurality of pixels is formed, the semiconductor substrate having a first principal surface and a second principal surface opposing each other; and a mount substrate disposed to oppose the semiconductor photodetecting element, and having a third principal surface opposing the second principal surface of the semiconductor substrate and a fourth principal surface opposing the third principal surface, wherein the semiconductor substrate includes a first region in which the plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which the first principal surface and the second principal surface oppose each other, a through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate, and a first electrode disposed on a side of the first principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and a second electrode disposed on a side of the third principal surface of the mount substrate are connected to each other via a first wire inserted through the through-hole. ### Claim 2 (depends on 1) The photodetecting device according to claim 1, wherein the semiconductor photodetecting element includes a plurality of semiconductor photodetecting elements, each of the semiconductor photodetecting elements is disposed on the mount substrate in such a manner that the second principal surface and the third principal surface oppose each other, and the first electrode and the second electrode are connected to each other via the first wire for each of the semiconductor photodetecting elements. ### Claim 3 (depends on 1) The photodetecting device according to claim 1, wherein the semiconductor photodetecting element includes a plurality of channels, the single channel being constituted by the single photodiode array, and the first electrode and the second electrode are connected to each other via the first wire for each of the channels. ### Claim 4 (depends on 1) The photodetecting device according to claim 1, wherein a third electrode disposed on the side of first principal surface of the semiconductor substrate and electrically connected to the semiconductor substrate and a fourth electrode disposed on the side of third principal surface of the mount substrate are connected to each other via a second wire inserted through the through-hole. ### Claim 5 (depends on 1) The photodetecting device according to claim 1, wherein the second region is located substantially at a center of the first region when viewed from the direction in which the first principal surface and the second principal surface oppose each other. ### Claim 6 (depends on 1) The photodetecting device according to claim 1, wherein an opening of the through-hole has a circular shape. ### Claim 7 (depends on 1) The photodetecting device according to claim 1, wherein an opening of the through-hole has a rectangular shape. ### Claim 8 (depends on 1) The photodetecting device according to claim 1, wherein the photodiode array includes: a plurality of avalanche photodiodes operating in a Geiger mode and formed in the semiconductor substrate: quenching resistors connected in series to the respective avalanche photodiodes and disposed on the side of first principal surface of the semiconductor substrate; and a signal line to which the quenching resistors are connected in parallel, and that disposed on the side of first principal surface of the semiconductor substrate, and the signal line is connected to the first electrode.