# US 2018/0026136 A1 · Semiconductor device with fin and related methods

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- Number: US 2018/0026136 A1
- Document ID: US20180026136A1
- Status: Published application
- Kind: A1
- Application number: 15/723,152
- Filed: 2017-10-02
- Published: 2018-01-25
- Earliest claimed: 2014-03-31
- Assignees: STMicroelectronics S.r.l.
- Applicants: Stmicroelectronics, Inc.
- Inventors: Pierre Morin; Nicolas Loubet
- Web page: https://patentgrep.com/patent/US20180026136A1

## CPC

- H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 84/834: {comprising FinFETs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.

## Claims

### Claim 1

A device, comprising:
a substrate;
a plurality of fins on the substrate;
source and drain regions at ends of each of the plurality of fins, each of the source and drain regions being Y-shaped; and
a channel region in each of the plurality of fins, the channel regions separating the source and drain regions.

### Claim 2 (depends on 1)

The device of claim 1, wherein the plurality of fins is canted with respect to the source and drain regions.

### Claim 3 (depends on 1)

The device of claim 1, further comprising a dielectric layer between the substrate and the plurality of fins.

### Claim 4 (depends on 1)

The device of claim 1, wherein the substrate and the plurality of fins each includes silicon.

### Claim 5 (depends on 1)

The device of claim 1, wherein the source and drain regions include silicon germanium.

### Claim 6 (depends on 1)

The device of claim 1, further comprising a gate structure over the channel regions.

### Claim 7 (depends on 6)

The device of claim 6, wherein the gate structure has an extension that is substantially parallel to an extension of the source and drain regions where the extension of the source and drain regions is canted with respect to the plurality of fins.

### Claim 8

A device, comprising:
a substrate;
a fin extending from the substrate, the fin having a length along a first direction;
a source region having a first portion and a second portion, the first portion having a length aligned in a second direction and the second portion having a length aligned in a third direction, the first, second, and third directions being different; and
a drain region having a first portion and a second portion, the first portion having a length aligned in the second direction and the second portion having a length aligned in the third direction, the drain region and the source region being adjacent to ends of the fin.

### Claim 9 (depends on 8)

The device of claim 8, further comprising:
a channel region in the fin and between the source region and the drain region; and
a gate structure over the channel region.

### Claim 10 (depends on 9)

The device of claim 9, wherein the gate structure has a length that extends in a fourth direction that is at an oblique angle to the first direction.

### Claim 11 (depends on 10)

The device of claim 10, wherein the gate structure is one of a plurality of gate structures on the substrate, each gate structure having a length that extends in the fourth direction; and
wherein the fin is one of a plurality of fins extending from the substrate and having a length along the first direction, each fin overlapped by a respective one of the plurality of gate structures.

### Claim 12 (depends on 11)

The device of claim 11, wherein the plurality of gate structures are staggered with respect to each other.

### Claim 13 (depends on 11)

The device of claim 11, further comprising source and drain regions adjacent to the plurality of fins and between ones of the plurality of gate structures, the source and drain regions each having a first portion and a second portion, the first portion having a length aligned in the second direction and the second portion having a length aligned in the third direction.

### Claim 14 (depends on 11)

The device of claim 11, further comprising a plurality of channel regions in the plurality of fins, each channel region being between the source and drain regions.

### Claim 15 (depends on 11)

The device of claim 11, wherein the plurality of gate structures are controlled by a single signal.

### Claim 16

A device, comprising:
a substrate;
a plurality of fins having a length aligned along a first axis;
a gate structure having a length aligned along a second axis that is oblique to the first axis, the gate structure positioned above the plurality of fins; and
a plurality of source and drain regions that are Y-shaped, each fin of the plurality of fin being adjacent to a source region and a drain region of the plurality of source and drain regions.

### Claim 17 (depends on 16)

The device of claim 16, further comprising a plurality of channel regions in the plurality of fins, each channel region being between the source and drain regions.

### Claim 18 (depends on 17)

The device of claim 17, wherein the plurality of channel regions include a strain in response to the oblique angle between the first and second axis.

### Claim 19 (depends on 16)

The device of claim 16, wherein the gate structure is one of a plurality of gate structures on the substrate, each gate structure having a length that extends along the second axis.

### Claim 20 (depends on 19)

The device of claim 19, wherein the plurality of gate structures are staggered with respect to each other.