# US 2018/0026110 A1 · Power electronic switching device, arrangement herewith and methods for producing the switching device

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- Number: US 2018/0026110 A1
- Document ID: US20180026110A1
- Status: Published application
- Kind: A1
- Application number: 15/653,615
- Filed: 2017-07-19
- Published: 2018-01-25
- Earliest claimed: 2016-07-22
- Assignees: Semikron Elektronik GmbH & Co. KG
- Applicants: Semikron Elektronik GmbH & Co. KG
- Inventors: HARALD KOBOLLA; Jörg Ammon
- Web page: https://patentgrep.com/patent/US20180026110A1

## CPC

- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D 48/32: Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/25: characterised by their materials
- H10W 40/77: Auxiliary members characterised by their shape
- H10W 70/644: {Elastic or compliant interconnections, e.g. springs, cantilevers or elastic pads}
- H10W 72/00: Interconnections or connectors in packages
- H10W 72/073: {of die-attach connectors}
- H10W 72/076: {of strap connectors}
- H10W 72/077: {Connecting of TAB connectors}
- H10W 90/00: Package configurations
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 40/70: Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/688: {Flexible insulating substrates}
- H10W 72/0711: {Apparatus therefor}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/701: {Tape-automated bond [TAB] connectors}
- H10W 72/874: {On different surfaces}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A switching device has a substrate and a power semiconductor component, comprising a connection device and a pressure device wherein the substrate has tracks electrically insulated from one another. The power semiconductor component is on one of the tracks with a first main surface and is conductively connected thereto. The device is embodied as a film composite having a conductive film and an insulating film that forms a first and a second main surface. The switching device is connected internally in a circuit-conforming manner by the connection device and a contact area of the connection device is connected to a first contact area of one of the tracks in a force-locking and electrically conductive manner. There is a pressure body projecting to the substrate and pressing onto a first section of the second main surface of the film composite.

## Claims

### Claim 1

A power electronic switching device (1), comprising:
a substrate (2) having at least one power semiconductor component (7) arranged thereon;
a connection device (3) for said power semiconductor component (7);
a pressure device (5) providing an urging pressure to said connection device 3;
the substrate (2) having a plurality of conductor tracks (22) electrically insulated from one another;
said power semiconductor component (7) having a first semiconductor main surface (70) arranged on one of the conductor tracks (22) and being electrically conductively connected thereto;
the connection device (3) being a film composite, said film composite further comprising:
at least one electrically conductive film (30, 34) and an electrically insulating film (32);
said film composite forming at least a first film main surface (300) and a second film main surface (340);
the switching device (1) is connected in a circuit-conforming manner by means of the connection device (3) and a first connection contact area (308, 342) of the connection device (3) is connected to a first conductor contact area (222) of one of the plurality of conductor tracks (22) in a force-locking and electrically conductive manner;
said pressure device (5) has a pressure body (50) and at least one pressure element (52) projecting therefrom in the direction of the power semiconductor component (7);
wherein the pressure element (52) presses onto a first film section (346) of the second main film surface (340) of the film composite (3); and
the pressure element (52), said first film section (346) and the first conductor contact area (222) of the conductor track (22) are arranged in alignment with one another in a direction that is normal (N) to the substrate 2.

### Claim 2 (depends on 1)

The switching device, according to claim 1, further comprising:
a second connection contact area (304) of the connection device (3) connected to a first semiconductor contact area (720) of a second semiconductor main surface (72) of the power semiconductor component (7) in at least one of a force-locking manner and a cohesive and electrically conductive manner.

### Claim 3 (depends on 2)

The switching device, according to claim 2, wherein:
the power semiconductor component (7) is electrically conductively connected by a second semiconductor component contact area (700) of said first semiconductor main surface (70) to an assigned conductor track (22) in one of a force-locking manner and a positively locking and electrically conductive manner.

### Claim 4 (depends on 1)

The switching device, according to claim 1, wherein:
the pressure body (50) has at least one first cutout (500); and
said at least one pressure element (52) projecting from said at least first cut out (500).

### Claim 5 (depends on 4)

The switching device, according to claim 4, wherein:
the at least one first cutout (500) of the pressure body (50) is embodied as a depression proceeding from a first pressure element main surface (502);
the pressure element (52) filling the cutout (500) of the pressure body (50); and
the pressure element (52) projecting outwardly from the cutout (500) of the pressure body beyond the first pressure element main surface (502) thereof.

### Claim 6 (depends on 1)

The switching device, according to claim 1, wherein:
the pressure body (50) consists of a high-temperature-resistant thermoplastic;
said high-temperature-resistant thermoplastic being one selected from the group consisting of: polyphenylene sulphide; and
the pressure element (52) consists of an elastomer selected from a group consisting of: a silicone elastomer and a crosslinked liquid silicone elastomer.

### Claim 7 (depends on 1)

The switching device, according to claim 1, wherein:
a cohesive connection of said connection device (3) is embodied as at least one of a soldering connection, an adhesive connection, and a pressure sintering connection.

### Claim 8 (depends on 1)

A switching device arrangement, comprising:
A power electronic switching device (1) according to claim 1, further comprising:
a cooling device (4);
a pressure introducing device (6); and
wherein the pressure introducing device (6) is supported at least one of directly and indirectly against the cooling device (4) and said pressure introducing device introduces a pressure proximately centrally on the pressure device (5) thereby connecting said cooling device (4) and said switching device (1) in a force-locking manner.

### Claim 9 (depends on 8)

The arrangement, according to claim 8, wherein:
a heat-conducting layer (40) is arranged between the substrate (2) and the cooling device (4); and
said heat-conducting layer has thickness of less than 20 μm.

### Claim 10 (depends on 8)

The arrangement, according to claim 8, wherein:
the cooling device (4) is at least one of a baseplate of a power semiconductor module and a heat sink.

### Claim 11

A method for producing a configuration of a power electronic switching device (1), comprising the steps of:
A. providing a substrate (2), further comprising:
an insulation layer (20) and conductor tracks (22) electrically insulated from one another;
wherein, on one of the conductor tracks (22), a power semiconductor component (7) is arranged and is connected to the conductor track (22) in a cohesive manner;
B. providing a connection device (3), wherein:
said connection device is embodied as a film stack embodied alternately with two electrically conductive, inherently structured films (30, 34) and an electrically insulating film (32) between the two conductive films (30, 34);
C. arranging an adhesive substance (36) on one of the substrate (2) and the connection device (3) at at least one adhesive section which does not serve for an electrically conductive connection between said substrate (2) and said connection device (3);
D. arranging and adhesively connecting the connection device (3) to the substrate (2) by means of the adhesive substance (36); and
E. introducing an urging pressure on the connection device (3) by positioning a pressure device (5) and a pressure introducing device (6) so that a force-locking and electrically conductive connection is formed between the connection device (3) and the conductor track (22).

### Claim 12 (depends on 11)

The method, according to claim 11, further comprising the steps of:
forming a force-locking and electrically conductive connection between the connection device (3) and the power semiconductor component (7).

### Claim 13

A method for producing a configuration of a power electronic switching device (1), comprising the steps of:
a. providing a substrate (2), said substrate (2) further comprising:
an insulation layer (20) and conductor tracks (22) electrically insulated from one another;
b. providing a connection device (3) embodied as a film stack arranged alternately with two electrically conductive structured films (30, 34) spaced by an electrically insulating film (32) between the two conductive films (30, 34);
c. arranging a power semiconductor component (7) on an assigned conductor track (22);
d. arranging an adhesive substance (36) between respective said power semiconductor component (7) and said assigned conductor track (22) and adhesively fixing the power semiconductor component (7) on said conductor track (22);
e. arranging and adhesively connecting the connection device (3) to the substrate (2) by with said adhesive substance (36); and
f. introducing a pressure on the connection device (3) with a pressure device (5) and a pressure introducing device (6) and providing a force-locking electrically conductive connection between the connection device (3) and an assigned conductor track (22).

### Claim 14 (depends on 13)

The method, according to claim 13, further comprising the steps of:
forming a force-locking electrically conductive connection between both the connection device (3) and the power semiconductor component (7), and between the power semiconductor component (7) and the assigned conductor track (22).