# US 2018/0026068 A1 · Semiconductor device and manufacturing method, and electronic appliance > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026068 A1 - Document ID: US20180026068A1 - Status: Published application - Kind: A1 - Application number: 15/546,138 - Filed: 2016-02-22 - Published: 2018-01-25 - Earliest claimed: 2015-03-05 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Jun OGI; Junichiro FUJIMAGARI; Susumu INOUE; Atsushi FUJIWARA - Web page: https://patentgrep.com/patent/US20180026068A1 ## CPC - H10F 39/811: {Interconnections} - H10F 39/018: {of hybrid image sensors} - H10F 39/024: {of coatings or optical elements} - H10F 39/026: {Wafer-level processing} - H10F 39/182: {Colour image sensors} - H10F 39/8063: {Microlenses} - H10F 39/809: {of hybrid image sensors} - H10W 72/536: {the connected ends being ball-shaped} - H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body} - H10W 90/722: {between stacked chips} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract There is provided a semiconductor device including: a plurality of bumps (13) on a first semiconductor substrate (11); and a lens material (57) in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps. ## Claims ### Claim 1 A semiconductor device comprising: a plurality of bumps on a first semiconductor substrate; and a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the lens material is formed only in a pixel region on the first semiconductor substrate. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the lens material is formed only in the region other than a region on the first semiconductor substrate that corresponds to a second semiconductor substrate configured to be bonded to the first semiconductor substrate via the bump. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein the lens material is formed to have an opening in a region on the first semiconductor substrate, the opening being larger than the second semiconductor substrate. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, further comprising: an under-fill resin formed between the second semiconductor substrate and the first semiconductor substrate; and a dam that is formed on the first semiconductor substrate and prevents leakage of the under-fill resin to a region other than a region to which the second semiconductor substrate is bonded on the first semiconductor substrate, wherein the lens material is formed to have an opening in a whole region inside the dam on the first semiconductor substrate. ### Claim 6 (depends on 3) The semiconductor device according to claim 3, further comprising: an under-fill resin formed between the second semiconductor substrate and the first semiconductor substrate; and a dam that is formed on the first semiconductor substrate and prevents leakage of the under-fill resin to a region other than a region to which the second semiconductor substrate is bonded on the first semiconductor substrate, wherein the lens material is formed to have an opening in only a partial region inside the dam on the first semiconductor substrate. ### Claim 7 (depends on 3) The semiconductor device according to claim 3, wherein the lens material is formed to have an opening in a region on the first semiconductor substrate, the opening is smaller than the second semiconductor substrate. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the side of the lens material closest to the bump is a side of an on-chip lens. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, further comprising: an electrode pad for bump connection formed on the first semiconductor substrate and configured to be connected to the bump; and an electrode pad for wire bonding formed on the first semiconductor substrate and configured to be connected to a wire bonding, wherein a ratio of a distance between a side of an opening portion for wire bonding closest to the lens material and a side of the lens material closest to the opening portion for wire bonding to a size of the opening portion for wire bonding is smaller than a ratio of a distance between a side of an opening portion for a bump closest to the lens material and a side of the lens material closest to the opening portion for a bump to a size of the opening portion for a bump. ### Claim 10 A method of manufacturing a semiconductor device comprising: forming a plurality of bumps on a first semiconductor substrate, and forming a lens material in a region other than the plurality of bumps on the first semiconductor substrate, wherein a distance between a side of a bump closest to the lens material and a side of the lens material closest to the bump is greater than twice a diameter of the bump closest to the lens material, and wherein the distance between the side of the bump closest to the lens material and the side of the lens material closest to the bump is greater a minimum pitch of the bumps. ### Claim 11 A semiconductor device comprising: a first semiconductor substrate having a rectangular shape; a second semiconductor substrate having a rectangular shape, wherein an area of the second semiconductor substrate is less than an area of the first semiconductor substrate and at least a region of a first edge of the second semiconductor substrate is flush with at least a region of a first edge of the first semiconductor substrate; and a third semiconductor substrate having a rectangular shape, wherein an area of the third semiconductor substrate is less than an area of the first semiconductor substrate and at least a region of a first edge of the third semiconductor substrate is flush with at least a region of a second edge of the first semiconductor substrate. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the first semiconductor substrate includes an array of pixels, wherein the second and third semiconductor substrates each include at least one logic circuit, wherein each of the first edge of the first semiconductor substrate and the first edge of the second semiconductor substrate correspond to a scribe line forming a first edge of the stacked semiconductor device, and wherein each of the second edge of the first semiconductor substrate and the first edge of the third semiconductor substrate correspond to a scribe line forming a second edge of the stacked semiconductor device. ### Claim 13 A method of manufacturing a semiconductor device, the method comprising: bonding a first semiconductor substrate including a plurality of logic circuits to second and third semiconductor substrates arrayed in a semiconductor wafer, where each of the second and third semiconductor substrates includes a pixel array, and wherein the first semiconductor substrate spans the second and third semiconductor substrates; and cutting a first edge of the first semiconductor substrate and a first edge of the second semiconductor substrate such that the first edge of the first semiconductor substrate and the first edge of the second semiconductor substrate are flush with one another. ### Claim 14 (depends on 13) The method of manufacturing the semiconductor device of claim 13, further including: bonding a fourth semiconductor substrate including a plurality of logic circuits to the second semiconductor substrate and a fifth semiconductor substrate, wherein the fourth semiconductor substrate spans the second and fifth semiconductor substrates; and cutting a second edge of the second semiconductor substrate and a first edge of the fourth semiconductor substrate such that the second edge of the second semiconductor substrate and the first edge of the fourth semiconductor substrate are flush with one another. ### Claim 15 A semiconductor device comprising: a first semiconductor substrate including a plurality of on-chip lenses corresponding to a plurality of pixels; and a second semiconductor substrate mounted to a light incident side of the first semiconductor substrate via one or more soldier bumps, wherein a size of the first semiconductor substrate is greater than a size of the second semiconductor substrate, and wherein the second semiconductor substrate is configured to receive one or more pixel signals from the first semiconductor substrate, process the one or more pixel signals, and output the processed one or more pixel signals.