# US 2018/0026064 A1 · Imaging device

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- Number: US 2018/0026064 A1
- Document ID: US20180026064A1
- Status: Published application
- Kind: A1
- Application number: 15/679,210
- Filed: 2017-08-17
- Published: 2018-01-25
- Earliest claimed: 2014-09-26
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Takayuki IKEDA; Yoshiyuki KUROKAWA
- Web page: https://patentgrep.com/patent/US20180026064A1

## CPC

- H10F 39/8037: {the integrated elements comprising a transistor}
- H02S 40/44: Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time (directly associated with the PV cell or integrated with the PV cell H10F77/67)
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/80: characterised by the materials
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
- H10F 39/182: {Colour image sensors}
- H10F 39/1892: {Direct radiation image sensors}
- H10F 39/1898: {Indirect radiation image sensors, e.g. using luminescent members}
- H10F 39/809: {of hybrid image sensors}
- H10F 77/121: comprising only selenium or only tellurium
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- Y02E 10/541: CuInSe2 material PV cells
- Y02E 10/60: Thermal-PV hybrids
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.

## Claims

### Claim 1

(canceled)

### Claim 2

An imaging device comprising:
a circuit comprising a first region and a second region;
a first transistor over the first region;
a first photoelectric conversion element over the first transistor, the first photoelectric conversion element comprising a first photoelectric conversion layer;
a second transistor over the second region; and
a second photoelectric conversion element over the second transistor, the second photoelectric conversion element comprising the first photoelectric conversion layer,
wherein each of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region,
wherein the first transistor is electrically connected to the first photoelectric conversion element, and
wherein the second transistor is electrically connected to the second photoelectric conversion element.

### Claim 3 (depends on 2)

The imaging device according to claim 2,
wherein the first photoelectric conversion element further comprises a first electrode and a light-transmitting conductive layer, and
wherein the second photoelectric conversion element further comprises a second electrode and the light-transmitting conductive layer.

### Claim 4 (depends on 3)

The imaging device according to claim 3, further comprising an insulating layer between the first electrode and the second electrode.

### Claim 5 (depends on 2)

The imaging device according to claim 2, wherein the first photoelectric conversion layer comprises selenium.

### Claim 6 (depends on 2)

The imaging device according to claim 2, wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).

### Claim 7 (depends on 2)

The imaging device according to claim 2, further comprising a first color filter over the first photoelectric conversion element.

### Claim 8 (depends on 2)

The imaging device according to claim 2, further comprising a second photoelectric conversion layer over the first photoelectric conversion element.

### Claim 9 (depends on 2)

The imaging device according to claim 2, further comprising a scintillator over the first photoelectric conversion element.

### Claim 10 (depends on 2)

An electronic device comprising:
the imaging device according to claim 2; and
a display device.

### Claim 11

An imaging device comprising:
a circuit comprising a first region and a second region;
a first transistor over the first region;
a first photoelectric conversion element over the first transistor, the first photoelectric conversion element comprising a first photoelectric conversion layer;
a second transistor over the second region; and
a second photoelectric conversion element over the second transistor, the second photoelectric conversion element comprising the first photoelectric conversion layer,
wherein each of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region,
wherein the circuit comprises a third transistor comprising silicon in a channel formation region,
wherein the first transistor is electrically connected to the third transistor,
wherein the first transistor is electrically connected to the first photoelectric conversion element, and
wherein the second transistor is electrically connected to the second photoelectric conversion element.

### Claim 12 (depends on 11)

The imaging device according to claim 11,
wherein the first photoelectric conversion element further comprises a first electrode and a light-transmitting conductive layer, and
wherein the second photoelectric conversion element further comprises a second electrode and the light-transmitting conductive layer.

### Claim 13 (depends on 12)

The imaging device according to claim 12, further comprising an insulating layer between the first electrode and the second electrode.

### Claim 14 (depends on 11)

The imaging device according to claim 11, wherein the first photoelectric conversion layer comprises selenium.

### Claim 15 (depends on 11)

The imaging device according to claim 11, wherein the oxide semiconductor comprises In, Zn, and M (M is Al, Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf).

### Claim 16 (depends on 11)

The imaging device according to claim 11, further comprising a first color filter over the first photoelectric conversion element.

### Claim 17 (depends on 11)

The imaging device according to claim 11, further comprising a second photoelectric conversion layer over the first photoelectric conversion element.

### Claim 18 (depends on 11)

The imaging device according to claim 11, further comprising a scintillator over the first photoelectric conversion element.

### Claim 19 (depends on 11)

An electronic device comprising:
the imaging device according to claim 11; and
a display device.