# US 2018/0026059 A1 · Solid-state imaging device, manufacturing method thereof, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026059 A1 - Document ID: US20180026059A1 - Status: Published application - Kind: A1 - Application number: 15/719,824 - Filed: 2017-09-29 - Published: 2018-01-25 - Earliest claimed: 2011-02-24 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Yuki Miyanami - Web page: https://patentgrep.com/patent/US20180026059A1 ## CPC - H10F 39/807: {Pixel isolation structures} - H04N 9/03: Circuitry for demodulating colour component signals modulated spatially by colour striped filters by frequency separation - H04N 25/778: comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/024: {of coatings or optical elements} - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/811: {Interconnections} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface. ## Claims ### Claim 1 An imaging device comprising: a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side; a plurality of photoelectric conversion portions disposed in the semiconductor substrate; a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions; a light shielding portion disposed adjacent the trench and including a first portion having a material made of a titanium nitride and a second portion having a material made of tungsten; a wiring layer disposed adjacent to the second side of the semiconductor substrate, wherein the trench includes a first material and a second material, at least one of the first material and the second material does not extend across the first side to an adjacent trench, the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, and the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids; and a pixel transistor disposed at the second side of the semiconductor substrate and coupled to the wiring layer, wherein the pixel transistor comprises a reset transistor and an amplifying transistor, and wherein the photoelectric conversion portions share the reset transistor and the amplifying transistor. ### Claim 2 (depends on 1) The imaging device of claim 1, wherein a pixel separation portion including the first material is disposed within the trench. ### Claim 3 (depends on 1) The imaging device of claim 1, further comprising: a silicon oxide layer, wherein the silicon oxide layer is disposed adjacent to the first side of the semiconductor substrate. ### Claim 4 (depends on 3) The imaging device of claim 3, wherein the light shielding portion is disposed between the silicon oxide layer and a color filter in a cross-section view. ### Claim 5 (depends on 2) The imaging device of claim 2, wherein the pixel separation portion has a lattice shape in a plan view. ### Claim 6 (depends on 5) The imaging device of claim 5, wherein the light shielding portion is disposed adjacent to the first side of the semiconductor substrate, wherein the light shielding portion has a lattice shape in the plan view, and wherein the lattice shape of the light shielding portion corresponds to the lattice shape of the pixel separation portion. ### Claim 7 (depends on 6) The imaging device of claim 6, wherein the lattice shape of the light shielding portion includes openings corresponding to the photoelectric conversion portions. ### Claim 8 (depends on 1) The imaging device of claim 1, wherein the second material includes hafnium oxide. ### Claim 9 (depends on 8) The imaging device of claim 8, wherein the first material includes silicon oxide. ### Claim 10 (depends on 1) The imaging device of claim 1, wherein the trench extends from the first side to the second side of the semiconductor substrate. ### Claim 11 (depends on 2) The imaging device of claim 2, wherein the pixel separation portion is formed by a material having a refractive index different from a refractive index of the semiconductor substrate. ### Claim 12 (depends on 1) The imaging device of claim 1, wherein the thickness of the second material is 1-18 nm. ### Claim 13 (depends on 1) The imaging device of claim 1, wherein the photoelectric conversion portions are HAD structures. ### Claim 14 (depends on 4) The imaging device of claim 4, further comprising: a microlens, wherein the color filter is disposed between the microlens and the semiconductor substrate in the cross-section view. ### Claim 15 (depends on 1) The imaging device of claim 1, further comprising: a selection transistor, wherein the photoelectric conversion portions share the selection transistor. ### Claim 16 An imaging device comprising: a semiconductor substrate having a first side as a light incident side and a second side opposite to the first side; a plurality of photoelectric conversion portions disposed in the semiconductor substrate; a trench disposed between photoelectric conversion portions of the plurality of photoelectric conversion portions; a light shielding portion disposed adjacent the trench and including a first portion having a material made of a titanium nitride and a second portion having a material made of tungsten; a wiring layer disposed adjacent to the second side of the semiconductor substrate, wherein the trench includes a first material and a second material, at least one of the first material and the second material does not extend across the first side to an adjacent trench, the first material is selected from the group consisting of SiN, SiO2, SiCN, and SiOC, the second material is selected from the group consisting of oxides of elemental hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoids, and a pixel separation portion including the first material is disposed within the trench; and a color filter, wherein the color filter includes a plurality of kinds of filter layers that each transmit light within different wavelength ranges, and wherein the pixel separation portion is formed so as to selectively absorb light within at least one of the wavelength ranges. ### Claim 17 (depends on 16) The imaging device of claim 16, wherein the pixel separation portion is formed so as to at least selectively absorb light within a first wavelength range corresponding to a shortest wavelength range from among the plurality of different wavelength ranges. ### Claim 18 (depends on 17) The imaging device of claim 17, wherein a first filter layer having a high transmissivity with respect to light within the first wavelength range and a second filter layer having a high transmissivity with respect to light of a second wavelength range having a longer wavelength than the first wavelength range are at least provided as the plurality of kinds of filter layers in the color filter, and wherein the first filter layer and the second filter layer are disposed on adjacent pixels. ### Claim 19 (depends on 10) The imaging device of claim 10, further comprising: a pixel transistor disposed at the second side of the semiconductor substrate and coupled to the wiring layer.