# US 2018/0026054 A1 · Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices

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- Number: US 2018/0026054 A1
- Document ID: US20180026054A1
- Status: Published application
- Kind: A1
- Application number: 15/648,167
- Filed: 2017-07-12
- Published: 2018-01-25
- Earliest claimed: 2016-07-19
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Xiangxin RUI; Lai ZHAO; Jrjyan Jerry CHEN; Soo Young CHOI; Yujia ZHAI
- Web page: https://patentgrep.com/patent/US20180026054A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 1/682: {having dielectrics comprising perovskite structures}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 86/021: {of multiple TFTs}
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/431: {having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

## Claims

### Claim 1

A thin film transistor structure comprising:
gate, source and drain electrodes formed on a substrate; and
an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

### Claim 2 (depends on 1)

The structure of claim 1, further comprising:
a capacitor layer formed on the gate electrode, wherein the capacitor layer is a hybrid film stack having a dielectric constant greater than 15.

### Claim 3

The structure of clam 1, wherein the hybrid film stack has a dielectric constant greater than 15.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the interface layer is at least one of aluminum oxide (Al2O3), aluminum nitride (AlN), aluminum titanium oxide (AlTiO), aluminum zirconium oxide (AlZrO), AlON, or Y2O3.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the interface layer of the hybrid film comprises a silicon containing material.

### Claim 6 (depends on 5)

The structure of claim 5, wherein the silicon containing material is silicon oxide or silicon nitride.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the dielectric layer comprising the zirconium containing material comprises aluminum in an amorphous structure.

### Claim 8 (depends on 7)

The structure of claim 7, wherein the dielectric layer is an aluminum doped ZrO2 layer having a dielectric constant between about 15 and 25.

### Claim 9 (depends on 7)

The structure of claim 7, where the first layer of the zirconium containing material comprising aluminum has an aluminum concentration between about 6 atm. % and about 20 atm. %.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the dielectric layer comprising the zirconium containing layer has a crystalline structure.

### Claim 11 (depends on 10)

The structure of claim 10, wherein the dielectric layer is a ZrO2 layer having a dielectric constant between about 25 and about 50.

### Claim 12 (depends on 1)

The structure of claim 1, wherein the dielectric layer or the interface layer is formed by an ALD process or a PE-ALD process.

### Claim 13

A method for forming a hybrid film stack for display devices, comprising:
forming an interface layer of a hybrid film stack on a substrate; and
forming a dielectric layer of the hybrid film stack by an ALD process on the interface layer, wherein the dielectric layer comprises zirconium containing material, wherein the hybrid film stack is utilized as a capacitor layer or an insulating layer in display devices.

### Claim 14 (depends on 13)

The method of claim 13, wherein the interface layer further comprises:
a silicon material formed in the interface layer.

### Claim 15 (depends on 13)

The method of claim 13, wherein the dielectric layer comprising the zirconium containing material comprises aluminum in an amorphous structure.

### Claim 16 (depends on 15)

The method of claim 15, wherein the interface layer is at least one of aluminum oxide (Al2O3), aluminum nitride (AlN), aluminum titanium oxide (AlTiO), aluminum zirconium oxide (AlZrO), AlON, or Y2O3.

### Claim 17 (depends on 13)

The method of claim 13, wherein the dielectric layer comprising the zirconium containing material has a crystalline structure.

### Claim 18 (depends on 17)

The structure of claim 17, wherein the dielectric layer is a ZrO2 layer having a dielectric constant between about 25 and about 50.

### Claim 19

A device structure utilized for display devices, comprising:
a hybrid film stack using as a capacitor structure formed between two electrodes in display devices, wherein the hybrid film stack comprises an interface layer and a Zr containing layer formed on the interface layer.

### Claim 20 (depends on 19)

The device structure of claim 19, wherein the interface layer is a silicon containing layer, an aluminum containing layer, or combinations thereof in the hybrid film stack formed under the Zr containing layer.