# US 2018/0026053 A1 · Semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2018/0026053 A1
- Document ID: US20180026053A1
- Status: Published application
- Kind: A1
- Application number: 15/677,125
- Filed: 2017-08-15
- Published: 2018-01-25
- Earliest claimed: 2012-09-13
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei YAMAZAKI; Hiroyuki MIYAKE; Hideaki SHISHIDO; Jun KOYAMA
- Web page: https://patentgrep.com/patent/US20180026053A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

## Claims

### Claim 1

(canceled)

### Claim 2

A semiconductor device comprising:
a first conductive film;
a gate insulating film over the first conductive film; and
a first metal oxide film over the gate insulating film;
a second metal oxide film over the gate insulating film;
a second conductive film over the first metal oxide film;
a third conductive film over the first metal oxide film;
an oxide insulating film over the first metal oxide film, the second conductive film and the third conductive film;
a nitride insulating film over the oxide insulating film; and
a pixel electrode over the nitride insulating film,
wherein the first metal oxide film includes a region overlapping the first conductive film,
wherein each of the second conductive film and the third conductive film is electrically connected to the first metal oxide film,
wherein the pixel electrode is electrically connected to the third conductive film,
wherein the pixel electrode includes a region overlapping the second metal oxide film with the nitride insulating film interposed therebetween,
wherein the first metal oxide film includes:
a third metal oxide film; and
a fourth metal oxide film over the third metal oxide film,
wherein each of the third metal oxide film and the fourth metal oxide film contains In, Ga and Zn,
wherein the third metal oxide film includes a region where an atomic ratio of In to Ga satisfies a relation In≧Ga, and
wherein the fourth metal oxide film includes a region where an atomic ratio of In to Ga satisfies a relation In<Ga.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2,
wherein the second metal oxide film is a light-transmitting conductive film, and
wherein the second metal oxide film is one electrode of a capacitor.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3,
wherein the light-transmitting conductive film contains a dopant in a higher concentration than the first metal oxide film.

### Claim 5 (depends on 3)

The semiconductor device according to claim 3,
wherein the gate insulating film comprises a second nitride insulating film in contact with the light-transmitting conductive film.

### Claim 6 (depends on 3)

The semiconductor device according to claim 3,
wherein the gate insulating film comprises a second nitride insulating film and a second oxide insulating film stacked on the second nitride insulating film,
wherein the second nitride insulating film is in contact with the light-transmitting conductive film, and
wherein the second oxide insulating film is in contact with the first metal oxide film.

### Claim 7 (depends on 3)

The semiconductor device according to claim 3,
wherein the light-transmitting conductive film contains a higher concentration of hydrogen than the first metal oxide film.

### Claim 8 (depends on 3)

The semiconductor device according to claim 3,
wherein the light-transmitting conductive film contains a higher concentration of nitrogen than the first metal oxide film.

### Claim 9 (depends on 3)

The semiconductor device according to claim 3,
wherein the light-transmitting conductive film contains a dopant at a concentration greater than 1×1019 atoms/cm3 and less than or equal to 1×1022 atoms/cm3.

### Claim 10 (depends on 3)

The semiconductor device according to claim 3, further comprising a capacitor line,
wherein the light-transmitting conductive film is in direct contact with the capacitor line.

### Claim 11 (depends on 2)

A display device comprising the semiconductor device according to claim 2.

### Claim 12 (depends on 2)

An electronic device comprising the semiconductor device according to claim 2.

### Claim 13

A semiconductor device comprising:
a first conductive film;
a gate insulating film over the first conductive film; and
a first metal oxide film over the gate insulating film;
a second metal oxide film over the gate insulating film;
a second conductive film over the first metal oxide film;
a third conductive film over the first metal oxide film;
a fourth conductive film over the second metal oxide film; and
a pixel electrode over the third conductive film,
wherein the first metal oxide film includes a region overlapping the first conductive film,
wherein each of the second conductive film and the third conductive film is electrically connected to the first metal oxide film,
wherein the fourth conductive film is electrically connected to the second metal oxide film,
wherein the pixel electrode is electrically connected to the third conductive film,
wherein the pixel electrode includes a region overlapping the second metal oxide film with a nitride insulating film interposed therebetween,
wherein each of the second conductive film, the third conductive film and the fourth conductive film has a same conductive material,
wherein the first metal oxide film includes:
a third metal oxide film; and
a fourth metal oxide film over the third metal oxide film,
wherein each of the third metal oxide film and the fourth metal oxide film contains In, Ga and Zn,
wherein the third metal oxide film includes a region where an atomic ratio of In to Ga satisfies a relation In≧Ga, and
wherein the fourth metal oxide film includes a region where an atomic ratio of In to Ga satisfies a relation In<Ga.

### Claim 14 (depends on 13)

The semiconductor device according to claim 13,
wherein the second metal oxide film is a light-transmitting conductive film, and
wherein the second metal oxide film is one electrode of a capacitor.

### Claim 15 (depends on 14)

The semiconductor device according to claim 14,
wherein the light-transmitting conductive film contains a dopant in a higher concentration than the first metal oxide film.

### Claim 16 (depends on 14)

The semiconductor device according to claim 14,
wherein the gate insulating film comprises a second nitride insulating film in contact with the light-transmitting conductive film.

### Claim 17 (depends on 14)

The semiconductor device according to claim 14,
wherein the gate insulating film comprises a second nitride insulating film and a second oxide insulating film stacked on the second nitride insulating film,
wherein the second nitride insulating film is in contact with the light-transmitting conductive film, and
wherein the second oxide insulating film is in contact with the first metal oxide film.

### Claim 18 (depends on 14)

The semiconductor device according to claim 14,
wherein the light-transmitting conductive film contains a higher concentration of hydrogen than the first metal oxide film.

### Claim 19 (depends on 14)

The semiconductor device according to claim 14,
wherein the light-transmitting conductive film contains a higher concentration of nitrogen than the first metal oxide film.

### Claim 20 (depends on 14)

The semiconductor device according to claim 14,
wherein the light-transmitting conductive film contains a dopant at a concentration greater than 1×1019 atoms/cm3 and less than or equal to 1×1022 atoms/cm3.

### Claim 21 (depends on 14)

The semiconductor device according to claim 14, further comprising a capacitor line,
wherein the light-transmitting conductive film is in direct contact with the capacitor line.

### Claim 22 (depends on 13)

A display device comprising the semiconductor device according to claim 13.

### Claim 23 (depends on 13)

An electronic device comprising the semiconductor device according to claim 13.

### Claim 24

A semiconductor device comprising:
a first conductive film;
a gate insulating film over the first conductive film; and
a first metal oxide film over the gate insulating film;
a second metal oxide film over the gate insulating film;
a second conductive film over the first metal oxide film;
a third conductive film over the first metal oxide film;
a fourth conductive film over the second metal oxide film;
an oxide insulating film over the first metal oxide film, the second conductive film, the third conductive film and the fourth conductive film;
a nitride insulating film over the oxide insulating film; and
a pixel electrode over the nitride insulating film,
wherein the first metal oxide film includes a region overlapping the first conductive film,
wherein each of the second conductive film and the third conductive film is electrically connected to the first metal oxide film,
wherein the fourth conductive film is electrically connected to the second metal oxide film,
wherein the pixel electrode is electrically connected to the third conductive film,
wherein the pixel electrode includes a region overlapping the second metal oxide film with the nitride insulating film interposed therebetween,
wherein each of the second conductive film, the third conductive film and the fourth conductive film has a same conductive material,
wherein the first metal oxide film includes:
a third metal oxide film; and
a fourth metal oxide film over the third metal oxide film,
wherein each of the third metal oxide film and the fourth metal oxide film contains In, Ga and Zn,
wherein the third metal oxide film includes a region where an atomic ratio of In to Ga satisfies a relation In≧Ga, and
wherein the fourth metal oxide film includes a region where an atomic ratio of In to Ga satisfies a relation In<Ga.

### Claim 25 (depends on 24)

The semiconductor device according to claim 24,
wherein the second metal oxide film is a light-transmitting conductive film, and
wherein the second metal oxide film is one electrode of a capacitor.

### Claim 26 (depends on 25)

The semiconductor device according to claim 25,
wherein the light-transmitting conductive film contains a dopant in a higher concentration than the first metal oxide film.

### Claim 27 (depends on 25)

The semiconductor device according to claim 25,
wherein the gate insulating film comprises a second nitride insulating film in contact with the light-transmitting conductive film.

### Claim 28 (depends on 25)

The semiconductor device according to claim 25,
wherein the gate insulating film comprises a second nitride insulating film and a second oxide insulating film stacked on the second nitride insulating film,
wherein the second nitride insulating film is in contact with the light-transmitting conductive film, and
wherein the second oxide insulating film is in contact with the first metal oxide film.

### Claim 29 (depends on 25)

The semiconductor device according to claim 25,
wherein the light-transmitting conductive film contains a higher concentration of hydrogen than the first metal oxide film.

### Claim 30 (depends on 25)

The semiconductor device according to claim 25,
wherein the light-transmitting conductive film contains a higher concentration of nitrogen than the first metal oxide film.

### Claim 31 (depends on 25)

The semiconductor device according to claim 25,
wherein the light-transmitting conductive film contains a dopant at a concentration greater than 1×1019 atoms/cm3 and less than or equal to 1×1022 atoms/cm3.

### Claim 32 (depends on 25)

The semiconductor device according to claim 25, further comprising a capacitor line,
wherein the light-transmitting conductive film is in direct contact with the capacitor line.

### Claim 33 (depends on 24)

A display device comprising the semiconductor device according to claim 24.

### Claim 34 (depends on 24)

An electronic device comprising the semiconductor device according to claim 24.