# US 2018/0026005 A1 · Power electronic switching device, arrangement herewith and methods for producing the switching device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0026005 A1 - Document ID: US20180026005A1 - Status: Published application - Kind: A1 - Application number: 15/657,277 - Filed: 2017-07-24 - Published: 2018-01-25 - Earliest claimed: 2016-07-22 - Assignees: Semikron Elektronik GmbH & Co. KG - Applicants: Semikron Elektronik GmbH & Co. KG - Inventors: HARALD KOBOLLA; JÖRG AMMON - Web page: https://patentgrep.com/patent/US20180026005A1 ## CPC - H10W 72/00: Interconnections or connectors in packages - H10W 40/10: Arrangements for heating - H10W 40/641: {Snap-on arrangements, e.g. clips} - H10W 70/688: {Flexible insulating substrates} - H10W 72/701: {Tape-automated bond [TAB] connectors} - H10W 72/851: {Dispositions of multiple connectors or interconnections} - H10W 90/00: Package configurations - H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts} - H10W 40/70: Fillings or auxiliary members in containers or in encapsulations for thermal protection or control - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 72/874: {On different surfaces} - H10W 90/10: Configurations of laterally-adjacent chips - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A switching device has a substrate, a power semiconductor component arranged thereon, a connection device and a pressure device. The substrate has conductor tracks electrically insulated from each another. A power semiconductor component is arranged on one of the conductor tracks. The connection device is embodied as a film composite having an electrically conductive film and an electrically insulating film and forming a first and a second main surface. The switching device is connected in a circuit-conforming manner by the connection device, and a contact area of the first main surface of the power semiconductor component is connected to a first contact area of an assigned conductor track of the substrate in a force-locking and electrically conductive manner. ## Claims ### Claim 1 A power electronic switching device (1). comprising a substrate (2) and a power semiconductor component (7) arranged thereon; a connection device (3) on the power semiconductor component (7); comprising a pressure device (5) providing an urging force to the connection device (3); the substrate (2) has a plurality of conductor tracks (22) each electrically insulated from one another; the power semiconductor component (7) arranged on one of the conductor tracks (22); the connection device (3) is embodied as a film composite, and said film composite further comprising: an electrically conductive film (30, 34) and an electrically insulating film (32) therebetween; film composite forming a first film composite main surface (300) and a second film composite main surface (340); the switching device is connected internally in a circuit-conforming manner by the connection device (3); a first main surface semiconductor contact area of a first power semiconductor main surface (70) of the power semiconductor component (7) is connected to a first conductor track contact area (220) of an assigned one of said plurality of conductor track (22) of the substrate (2) in a force-locking and electrically conductive manner; the pressure device (5) has a pressure body (50) and at least one pressure element (52) projecting therefrom in a direction of the power semiconductor component (7); the pressure element (52) pressing onto a first section (344) of the second film composite main surface (340) of the film composite (3) and said first section (344) is arranged within an area (74) proximate the power semiconductor component (7) in a projection along a direction normal (N) to the power semiconductor component (7). ### Claim 2 (depends on 1) The switching device, according to claim 1, further comprising: a second connection device contact area (308) of the connection device (3) is connected to a second conductor contact area (222) of another assigned one of said plurality of assigned conductor tracks (22) of the substrate (2) in a force-locking or materially bonded and electrically conductive manner. ### Claim 3 (depends on 1) The switching device, according to claim 1, wherein: the power semiconductor component (7) is electrically conductively connected by a second power semiconductor main surface (72) to an assigned first film contact area of the first film composite main surface (300) of the connection device (3) in one of a force-locking manner and a materially bonded manner. ### Claim 4 (depends on 1) The switching device, according to claim 1, wherein: the pressure body (50) has at least a first cutout (500); and a pressure element (52) projects from said first cutout (500). ### Claim 5 (depends on 4) The switching device, according to claim 4, wherein: the first cutout (500) of the pressure body (50) is embodied as a depression proceeding from a first main surface (502) of said pressure body (50); the pressure element (52) filling the cutout (500) of the pressure body (50); and the pressure element (52) projecting away from the cutout (500) of the pressure body at the first main surface (502) thereof. ### Claim 6 (depends on 4) The switching device, according to claim 4, wherein: the pressure body (50) consists of a high-temperature-resistant thermoplastic, said high-temperature thermoplastic including at least a portion as polyphenylene sulphide; and the pressure element (52) consists of an elastomer; wherein said elastomer is at least one of a silicone elastomer and a crosslinked liquid silicone elastomer. ### Claim 7 (depends on 4) The switching device, according to claim 4, wherein: the ratio of a lateral extent (544) of the pressure element (52) to a vertical extent (520) of the pressure element (52) is more than 2 to 1, in particular of more than 4 to 1. ### Claim 8 (depends on 1) The switching device, according to claim 1, wherein; a surface area of the first section (344) of the second film composite main surface (340) of the film composite (3) is at least 20% of the area (74) of the assigned power semiconductor component (7). ### Claim 9 (depends on 3) The switching device, according to claim 3, wherein: the respective electrically conductive connection of said power semiconductor component 7 is said materially bonded manner; and said materially bonded manner is at least one of a soldering connection an adhesive connection and a pressure sintering connection. ### Claim 10 (depends on 1) A switching arrangement, comprising: an electronic switching device (1) according, to claim 1; said switching arrangement, further comprising: a cooling device (4); a pressure introducing device (6) supported at least one of indirectly and directly against the cooling device (4); and said pressure device introducing a pressure proximately centrally on the pressure device (5), whereby the switching device (1) is connected to the cooling device (4) in a force-locking manner. ### Claim 11 (depends on 10) switching arrangement, according to claim 10, further comprising: a heat-conducting layer (40) having a thickness of less than 20 μm between the substrate (2) and the cooling device (4). ### Claim 12 (depends on 10) The switching arrangement, according to claim 10, wherein; the cooling device (4) is one of a metallic baseplate of a power semiconductor module and a heat sink. ### Claim 13 A method, for producing a first configuration of a power electronic switching device (1), comprising the steps of: A. providing a substrate (2) comprising an insulation layer (20) and a plurality of conductor tracks (22); each said conductor track (22) electrically insulated from one another; B. providing a connection device (3) embodied as a film stack; said film stack formed with an electrically insulating film (32) spaced between two electrically conductive inherently structured films (30, 34); wherein a power semiconductor component (7) is connected to a contact location of the connection device (3) in one of a materially bonded manner and an electrically conductive manner; C. arranging an adhesive substance (36) on one of the substrate (2) and the connection device (3) at adhesive sections which do not serve for electrically conductive connections between said connection device (3) and the substrate (2); D. arranging and adhesively connecting the connection device (3) to the substrate (2) by the adhesive substance (36); and E. introducing a pressure on the connection device (3) by a pressure device (5) and a pressure introducing device (6) thereby forming a force-locking electrically conductive connection between the substrate (2) and the power semi conductor component (7). ### Claim 14 (depends on 13) The method, according to claim 13, further comprising the step of: forming a force-locking electrically conductive connection between the connection device (3) and the assigned conductor track (22). ### Claim 15 A method for producing a second configuration of a power electronic switching device (1), comprising the steps of: providing a substrate (2) comprising an insulation layer (20) and a plurality of conductor tracks (22) electrically insulated from one another; b. providing a connection device (3) embodied as a film stack; said film stack embodied as an electrically insulating film (32) between two electrically conductive inherently structured films (30, 34); c. arranging a power semiconductor component (7) on an assigned one of said plurality of conductor track (22) of said substrate (2); d. arranging an adhesive substance (36) and adhesively fixing the power semiconductor component (7) on at least one of assigned conductor tracks (22); e. arranging and adhesively connecting the connection device (3) to the substrate (2) by means of the adhesive substance (36); and f. introducing a pressure on the connection device (3) by urging a pressure introducing device (6) and a pressure device (5) to form a force-locking electrically conductive connection between the power semiconductor component (7) and the assigned conductor track (22) of the substrate (2). ### Claim 16 (depends on 15) The method, according to claim 15, further comprising the steps of: forming a force-locking electrically conductive connection between the connection device (3) and the power semiconductor component (7); and forming a force-locking electrically conductive connection between the connection device (3) and an assigned conductor track (22).