# US 2018/0026004 A1 · Bonding wire, wire bonding method using the bonding wire, and electrical connection part of semiconductor device using the bonding wire

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- Number: US 2018/0026004 A1
- Document ID: US20180026004A1
- Status: Published application
- Kind: A1
- Application number: 15/616,525
- Filed: 2017-06-07
- Published: 2018-01-25
- Earliest claimed: 2016-07-20
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: WON-GIL HAN; SANGHO AN; YONG JE LEE; JAE HEUNG LEE; SEUNGWEON HA
- Web page: https://patentgrep.com/patent/US20180026004A1

## CPC

- H10W 90/00: Package configurations
- H10W 72/01551: {Changing the shapes of bond wires}
- H10W 72/07141: {Means for applying energy, e.g. ovens or lasers}
- H10W 72/07168: {Means for storing or moving the material for the connector}
- H10W 72/07511: {Treating the bonding area before connecting, e.g. by applying flux or cleaning}
- H10W 72/07521: {Aligning}
- H10W 72/07532: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding}
- H10W 72/07541: {Controlling the environment, e.g. atmosphere composition or temperature}
- H10W 72/07554: {changes in dispositions}
- H10W 72/522: {Multilayered bond wires, e.g. having a coating concentric around a core}
- H10W 72/535: {Shapes of outermost layers of multilayered bond wires, e.g. coating not being conformal on a core}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5363: {the connected ends being wedge-shaped}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/555: {of outermost layers of multilayered bond wires, e.g. material of a coating}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/90: Bond pads, in general
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 80/314: {characterized by direct bonding of pads or other interconnections}
- H10W 90/752: {between stacked chips}
- H10W 90/753: {between laterally-adjacent chips}
- H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A bonding wire includes a wire core including a silver-palladium alloy, and a coating layer disposed on a sidewall of the wire core. A palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

## Claims

### Claim 1

A bonding wire comprising:
a wire core including a silver-palladium alloy; and
a coating layer disposed on a sidewall of the wire core,
wherein a palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

### Claim 2 (depends on 1)

The bonding wire of claim 1, wherein reactivity of the coating layer to oxygen is lower than reactivity of the wire core to oxygen.

### Claim 3 (depends on 1)

The bonding wire of claim 1, wherein the coating layer includes gold.

### Claim 4 (depends on 3)

The bonding wire of claim 3, wherein a gold content of the coating layer is 99.99% or higher.

### Claim 5 (depends on 1)

The bonding wire of claim 1, wherein an average thickness of the coating layer ranges from about 50 nm to about 150 nm.

### Claim 6 (depends on 1)

The bonding wire of claim 1, wherein a thickness of a thinnest portion of the coating layer is about 50 nm or more, and
wherein a thickness of a thickest portion of the coating layer is about 200 nm or less.

### Claim 7 (depends on 1)

The bonding wire of claim 1, wherein a diameter of the wire core ranges from about 12 μm to about 20 μm.

### Claim 8

A bonding wire comprising:
a wire core including a silver-palladium alloy; and
a coating layer disposed on a sidewall of the wire core, the coating layer including gold,
wherein a thickness of a thinnest portion of the coating layer is about 50 nm or more, and
wherein a thickness of a thickest portion of the coating layer is about 200 nm or less.

### Claim 9 (depends on 8)

The bonding wire of claim 8, wherein a palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

### Claim 10 (depends on 8)

The bonding wire of claim 8, wherein the coating layer includes 99.99% or more gold.

### Claim 11 (depends on 8)

The bonding wire of claim 8, wherein an average thickness of the coating layer ranges from about 50 nm to about 150 nm.

### Claim 12 (depends on 8)

The bonding wire of claim 8, wherein a diameter of the wire core ranges from about 12 μm to about 20 μm.

### Claim 13

An electrical connection part of a semiconductor device, comprising:
a device including a first pad and a second pad spaced apart from each other; and
a wire structure electrically connecting the first pad to the second pad,
wherein the wire structure comprises:
a first bonding portion in contact with the first pad;
a second bonding portion in contact with the second pad; and
a wire loop connecting the first bonding portion to the second bonding portion,
wherein the wire loop comprises:
a wire core including a silver-palladium alloy; and
a coating layer disposed on a sidewall of the wire core,
wherein a palladium content of the silver-palladium alloy ranges from about 0.1 wt % to about 1.5 wt %.

### Claim 14 (depends on 13)

The electrical connection part of a semiconductor device of claim 13, wherein the coating layer includes 99.99% or more gold.

### Claim 15 (depends on 13)

The electrical connection part of a semiconductor device of claim 13, wherein an average thickness of the coating layer ranges from about 50 nm to about 150 nm.

### Claim 16 (depends on 13)

The electrical connection part of a semiconductor device of claim 13, wherein a thickness of a thinnest portion of the coating layer is about 50 nm or more, and
wherein a thickness of a thickest portion of the coating layer is about 200 nm or less.

### Claim 17 (depends on 13)

The electrical connection part of a semiconductor device of claim 13, wherein one of the first and second bonding portions comprises:
a ball bonding core portion connected to the wire core; and
a ball bonding coating portion connected to the coating layer.

### Claim 18 (depends on 17)

The electrical connection part of a semiconductor device of claim 17, wherein the ball bonding coating portion is disposed on the ball bonding core portion.

### Claim 19 (depends on 17)

The electrical connection part of a semiconductor device of claim 17, wherein the ball bonding core portion includes a silver-palladium alloy having a palladium content of from about 0.1 wt % to about 1.5 wt %, and
wherein the ball bonding coating portion includes gold.

### Claim at position 20

20-32. (canceled)