# US 2018/0025981 A1 · Method for providing electrical antifuse including phase change material > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0025981 A1 - Document ID: US20180025981A1 - Status: Published application - Kind: A1 - Application number: 15/712,912 - Filed: 2017-09-22 - Published: 2018-01-25 - Earliest claimed: 2016-07-20 - Assignees: International Business Machines Corporation - Applicants: International Business Machines Corporation - Inventors: Chih-Chao Yang - Web page: https://patentgrep.com/patent/US20180025981A1 ## CPC - H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive} - H10W 20/425: {Barrier, adhesion or liner layers} - H10W 20/4441: {the principal metal being a refractory metal} - H10W 20/4403: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An antifuse structure including a first electrode that is present in at a base of the opening in the dielectric material. The antifuse structure further includes an antifuse material layer comprising a phase change material alloy of tantalum and nitrogen. A first surface of the antifuse material layer is present in direct contact with the first electrode. A second electrode is present in direct contact with a second surface of the antifuse material layer that is opposite the first surface of the antifuse material layer. ## Claims ### Claim 1 A method of forming an antifuse: forming antifuse material layer comprising a phase change material alloy of tantalum and nitrogen, the phase change material alloy having an orthorhombic phase prior to said antifuse structure being programmed, wherein the phase change material is programmed thermally. ### Claim 2 (depends on 1) The method of claim 1, wherein the phase change material alloy comprises Ta3N5 before programming, wherein the Ta3N5 is an insulator. ### Claim 3 (depends on 1) The method of claim 1, wherein forming the antifuse material comprises a chemical vapor deposition (CVD) process. ### Claim 4 (depends on 3) The method of claim 3, wherein the CVD process includes a nitrogen containing gas with a flow rate ranging from 500 sccm to 5000 sccm. ### Claim 5 (depends on 1) The method of claim 1, wherein said programmed thermally comprises heating the antifuse material layer to a temperature ranging from 500° C. to 900° C. ### Claim 6 (depends on 1) The method of claim 1, further comprising an electrically conductive feature in direct contact with the phase change material alloy. ### Claim 7 (depends on 6) The method of claim 6, wherein the electrically conductive feature thermally heats the antifuse material. ### Claim 8 (depends on 1) The method of claim 1, wherein the phase change material alloy has electrically conductive properties and a cubic or hexagonal phase following said antifuse structure being programmed. ### Claim 9 (depends on 7) The method of claim 7, wherein the phase change material alloy is TaN. ### Claim 10 (depends on 1) The method of claim 1, wherein the phase change material alloy has electrically conductive properties and a cubic phase following said antifuse structure being programmed. ### Claim 11 (depends on 6) The method of claim 6, wherein the electrically conductive feature comprises a metal selected from the group consisting of Cu, W, Al, Co, Rh, Ru, Ir, Ni and combinations thereof. ### Claim 12 (depends on 6) The method of claim 6, further comprising forming a diffusion barrier between sidewalls of at least one opening in a dielectric material in which said antifuse material is present, and sidewalls of at least one of said antifuse material layer and said electrically conductive material. ### Claim 13 (depends on 12) The method of claim 12, wherein the diffusion barrier comprises a diffusion barrier metal containing material selected from the group consisting of tantalum nitride (TaN), titanium nitride (TiN), ruthenium (Ru), tungsten nitride (W(N)), RuTa(N), Co, Ru and combinations thereof. ### Claim 14 (depends on 13) The method of claim 13, wherein the electrically conductive material extends across an entirety of a width of said at least one opening in the dielectric contacting said diffusion barrier on each of said sidewalls of said opening, and said phase change material alloy is present directly atop said first conductive material and across said entirety of said width of said at least one opening in the dielectric contacting said diffusion barrier on each of said sidewalls of said at least one opening. ### Claim 15 (depends on 14) The method of claim 14, wherein said phase change material alloy is centrally positioned in at least one opening, and said electrically conductive material includes vertical portions separating said phase change material alloy from said diffusion barrier on said sidewalls of said at least one opening. ### Claim 16 (depends on 12) The method of claim 12, wherein the antifuse material layer that is centrally positioned extends an entire vertical height of the at least one opening. ### Claim 17 A method of forming an antifuse: forming antifuse material layer comprising a phase change material alloy of tantalum and nitrogen, wherein the phase change material is programmed thermally; and an electrically conductive feature in direct contact with the phase change material alloy, wherein the electrically conductive feature thermally heats the antifuse material. ### Claim 18 (depends on 17) The method of claim 17, wherein the phase change material alloy comprises Ta3N5 before programming, wherein the Ta3N5 is an insulator. ### Claim 19 (depends on 17) The method of claim 17, wherein forming the antifuse material comprises a chemical vapor deposition (CVD) process, wherein the CVD process includes a nitrogen containing gas with a flow rate ranging from 500 sccm to 5000 sccm. ### Claim 20 (depends on 17) The method of claim 17, wherein said programmed thermally comprises heating the antifuse material layer to a temperature ranging from 500° C. to 900° C.