# US 2018/0025958 A1 · Base-attached encapsulant for semiconductor encapsulation, semiconductor apparatus, and method for manufacturing semiconductor apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0025958 A1 - Document ID: US20180025958A1 - Status: Published application - Kind: A1 - Application number: 15/715,455 - Filed: 2017-09-26 - Published: 2018-01-25 - Earliest claimed: 2016-05-11 - Assignees: Shin-Etsu Chemical Co., Ltd. - Applicants: Shin-Etsu Chemical Co., Ltd. - Inventors: Tomoaki NAKAMURA; Hideki AKIBA; Toshio SHIOBARA - Web page: https://patentgrep.com/patent/US20180025958A1 ## CPC - H10W 74/473: {containing a filler} - H10P 54/00: Cutting or separating of wafers, substrates or parts of devices - H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)} - H10W 72/0198: {batch processes} - H10W 74/014: {using batch processing} - H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)} - H10W 74/117: {the substrate having spherical bumps for external connection} - H10W 74/129: {forming a chip-scale package [CSP]} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/9413: {on encapsulations} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A base-attached encapsulant for semiconductor encapsulation is used for collectively encapsulating a device-mounted surface of the semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon. The base-attached encapsulant has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient α1 of the semiconductor device to be encapsulated by the base-attached encapsulant, a linear expansion coefficient α2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient α3 of the base satisfy both of the following formula (1) and (2); α1<α3<α2 (1) −2<α1+α2−2α3<2 (2) wherein the unit of the linear expansion coefficient is ppm/K. The base-attached encapsulant for semiconductor encapsulation which suppress package warpage even if a package with a large area is encapsulated. ## Claims ### Claim 1 A base-attached encapsulant for semiconductor encapsulation which is used for collectively encapsulating a device-mounted surface of a semiconductor device-mounted substrate having semiconductor devices mounted thereon or a device-formed surface of a semiconductor device-formed wafer having semiconductor devices formed thereon, wherein the base-attached encapsulant for semiconductor encapsulation has a base and an encapsulating resin layer containing an uncured or semi-cured thermosetting resin component formed onto one of the surfaces of the base, and a linear expansion coefficient α1 of the semiconductor device to be encapsulated by the base-attached encapsulant for semiconductor encapsulation, a linear expansion coefficient α2 of a cured product of the encapsulating resin layer, and a linear expansion coefficient α3 of the base satisfy both of the following formula (1) and (2); α1<α3<α2 (1) −2<α1+α2−2α3<2 (2) wherein the unit of the linear expansion coefficient is ppm/K. ### Claim 2 (depends on 1) The base-attached encapsulant for semiconductor encapsulation according to claim 1, wherein the linear expansion coefficient α1, the linear expansion coefficient α2, and the linear expansion coefficient α3 satisfy the following formula (3) and (4), in addition to the formula (1) and (2); α3−α1<5 (3) α2−α3<5 (4) wherein the unit of the linear expansion coefficient is ppm/K. ### Claim 3 (depends on 1) The base-attached encapsulant for semiconductor encapsulation according to claim 1, wherein the base is a fiber-containing resin base in which a thermosetting resin composition has been impregnated into a fiber base and cured. ### Claim 4 (depends on 2) The base-attached encapsulant for semiconductor encapsulation according to claim 2, wherein the base is a fiber-containing resin base in which a thermosetting resin composition has been impregnated into a fiber base and cured. ### Claim 5 (depends on 1) The base-attached encapsulant for semiconductor encapsulation according to claim 1, wherein the encapsulating resin layer is a material containing no thermoplastic resin component or a material containing 2% by mass or less of a thermoplastic resin component based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 6 (depends on 2) The base-attached encapsulant for semiconductor encapsulation according to claim 2, wherein the encapsulating resin layer is a material containing no thermoplastic resin component or a material containing 2% by mass or less of a thermoplastic resin component based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 7 (depends on 3) The base-attached encapsulant for semiconductor encapsulation according to claim 3, wherein the encapsulating resin layer is a material containing no thermoplastic resin component or a material containing 2% by mass or less of a thermoplastic resin component based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 8 (depends on 4) The base-attached encapsulant for semiconductor encapsulation according to claim 4, wherein the encapsulating resin layer is a material containing no thermoplastic resin component or a material containing 2% by mass or less of a thermoplastic resin component based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 9 (depends on 1) The base-attached encapsulant for semiconductor encapsulation according to claim 1, wherein the encapsulating resin layer contains an inorganic filler, and an amount of the inorganic filler is 75 to 95% by mass based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 10 (depends on 2) The base-attached encapsulant for semiconductor encapsulation according to claim 2, wherein the encapsulating resin layer contains an inorganic filler, and an amount of the inorganic filler is 75 to 95% by mass based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 11 (depends on 3) The base-attached encapsulant for semiconductor encapsulation according to claim 3, wherein the encapsulating resin layer contains an inorganic filler, and an amount of the inorganic filler is 75 to 95% by mass based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 12 (depends on 5) The base-attached encapsulant for semiconductor encapsulation according to claim 5, wherein the encapsulating resin layer contains an inorganic filler, and an amount of the inorganic filler is 75 to 95% by mass based on a total mass of a composition for forming the encapsulating resin layer. ### Claim 13 (depends on 1) A semiconductor apparatus which comprises a semiconductor device being encapsulated by the encapsulating resin layer of the base-attached encapsulant for semiconductor encapsulation according to claim 1. ### Claim 14 (depends on 2) A semiconductor apparatus which comprises a semiconductor device being encapsulated by the encapsulating resin layer of the base-attached encapsulant for semiconductor encapsulation according to claim 2. ### Claim 15 (depends on 3) A semiconductor apparatus which comprises a semiconductor device being encapsulated by the encapsulating resin layer of the base-attached encapsulant for semiconductor encapsulation according to claim 3. ### Claim 16 (depends on 13) The semiconductor apparatus according to claim 13, wherein the semiconductor apparatus is a fan-out wafer level package.