# US 2018/0025947 A1 · Method of manufacturing integrated circuit device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0025947 A1 - Document ID: US20180025947A1 - Status: Published application - Kind: A1 - Application number: 15/460,273 - Filed: 2017-03-16 - Published: 2018-01-25 - Earliest claimed: 2016-07-21 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Hee-don Hwang; Young-wook Park; Min-woo Kim; Yoo-jin Jeong - Web page: https://patentgrep.com/patent/US20180025947A1 ## CPC - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes} - H10D 84/0151: {Manufacturing their isolation regions} - H10D 84/0158: {the components including FinFETs} - H10P 50/695: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method of manufacturing an integrated circuit device includes providing a substrate with a pattern structure, the pattern structure including a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween. At least one support structure that contacts an upper surface of the pattern structure and extends on the pattern structure in a second direction that crosses the first direction is formed. A buried layer that fills the spaces between the plurality of first patterns while the at least one support structure contacts the upper surface of the pattern structure is formed. The at least one support structure is separated from the pattern structure. ## Claims ### Claim 1 A method of manufacturing an integrated circuit device, the method comprising: providing a substrate with a pattern structure, the pattern structure comprising a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween; forming at least one support structure that contacts an upper surface of the pattern structure and extends on the pattern structure in a second direction that crosses the first direction; forming, while the at least one support structure contacts the upper surface of the pattern structure, a buried layer that fills the spaces between the plurality of first patterns; and removing the at least one support structure from the pattern structure. ### Claim 2 (depends on 1) The method of claim 1, wherein, in the forming of the at least one support structure, a lower surface of the at least one support structure that faces the substrate includes a first local surface and a second local surface without a step difference between the first local surface and the second local surface, the first local surface facing the upper surface of the pattern structure, the second local surface facing the space, the lower surface having a planar shape that extends in the second direction. ### Claim 3 (depends on 1) The method of claim 1, wherein, in the forming of the at least one support structure, a lower surface of the at least one support structure that faces the substrate includes a first local surface and a second local surface and extends in the second direction with a step difference between the first local surface and the second local surface, the first local surface facing the upper surface of the pattern structure, the second local surface facing the space, the lower surface having an uneven shape that extends in the second direction. ### Claim 4 (depends on 1) The method of claim 1, wherein the forming of the at least one support structure comprises: forming a sacrificial pattern on the substrate, the sacrificial pattern filling the spaces in the plurality of first patterns; forming a support layer on the pattern structure and the sacrificial pattern, the support layer contacting the upper surface of the pattern structure and an upper surface of the sacrificial pattern; and forming the at least one support structure by patterning the support layer. ### Claim 5 (depends on 4) The method of claim 4, wherein the forming of the sacrificial pattern comprises: forming a sacrificial layer that fills the spaces between the plurality of first patterns and covers the upper surface of the pattern structure; and exposing the upper surface of the pattern structure by removing a portion of the sacrificial layer so that the sacrificial layer remains only in the spaces between the plurality of first patterns. ### Claim 6 (depends on 4) The method of claim 4, wherein, in the forming of the sacrificial pattern, the sacrificial pattern is formed in a manner such that an upper surface of the sacrificial pattern is disposed at a same level as the upper surface of the pattern structure. ### Claim 7 (depends on 4) The method of claim 4, wherein, in the forming of the sacrificial pattern, the sacrificial pattern is formed to have an upper surface that is disposed at a lower level than the upper surface of the pattern structure. ### Claim 8 (depends on 1) The method of claim 1, wherein in the forming of the at least one support structure, a plurality of support structures are formed separated from one another, a minimum separation distance between adjacent two of the plurality of support structures being greater than a maximum separation distance between adjacent two of the plurality of first patterns in the second direction. ### Claim 9 (depends on 1) The method of claim 1, wherein the forming of the pattern structure comprises forming the plurality of first patterns by etching the substrate. ### Claim 10 (depends on 1) The method of claim 1, wherein the forming of the pattern structure comprises: forming a plurality of second patterns on the substrate, the plurality of second patterns including a different material from a material of the substrate; and forming the plurality of first patterns by etching the substrate with the plurality of second patterns as an etch mask, and the at least one support structure is formed to contact an upper surface of the plurality of second patterns. ### Claim 11 A method of manufacturing an integrated circuit device, the method comprising: forming a device isolation trench in a substrate, the device isolation trench defining a plurality of active regions; forming a device isolation layer that fills the device isolation trench around the plurality of active regions; forming a plurality of mask line patterns on the plurality of active regions and the device isolation layer, the plurality of mask line patterns extending parallel to one another in a first direction and being separated from one another by a predefined distance; forming a plurality of space lines and a plurality of line patterns that define the plurality of space lines by etching the plurality of active regions and the device isolation layer with the plurality of mask line patterns as an etch mask; forming at least one support structure that contacts an upper surface of the plurality of mask line patterns and extends on the plurality of mask line patterns in a second direction that intersects the first direction; and forming a word line structure that fills the plurality of space lines while the at least one support structure contacts the upper surface of the plurality of mask line patterns. ### Claim 12 (depends on 11) The method of claim 11, wherein, in the forming of the at least one support structure, a plurality of support structures are formed separated from one another by the predefined distance, wherein a minimum separation distance between adjacent two of the plurality of support structures being greater than a maximum separation distance between adjacent two of the plurality of mask line patterns in the second direction. ### Claim 13 (depends on 11) The method of claim 11, wherein the plurality of line patterns comprises some of the plurality of active regions and a portion of the device isolation layer. ### Claim 14 (depends on 11) The method of claim 11, wherein the word line structure comprises metal. ### Claim 15 (depends on 11) The method of claim 11, wherein the forming of the at least one support structure comprises: forming a sacrificial pattern that fills the plurality of space lines; forming the at least one support structure having a lower surface that contacts an upper surface of at least portion of the plurality of mask line patterns and an upper surface of the sacrificial pattern; and removing the sacrificial pattern. ### Claim 16 (depends on 15) The method of claim 15, wherein, in the forming of the at least one support structure, the lower surface of the at least one support structure is a planar surface. ### Claim at position 17 17-25. (canceled) ### Claim 26 A method of manufacturing an integrated circuit device, the method comprising: providing a substrate with a pattern structure, the pattern structure comprising a plurality of first patterns that extend in a first direction, are parallel to one another, and are separated from one another with a space therebetween; forming a sacrificial pattern on the substrate, the sacrificial pattern filling the spaces between the plurality of first patterns and formed of a different material from a material of the pattern structure; forming at least one support structure on upper surfaces of the pattern structure and extending on the pattern structure and the sacrificial pattern in a second direction that crosses the first direction, wherein the at least one support structure is formed of a different material from a material of the sacrificial pattern; removing the sacrificial pattern from the spaces in the plurality first patterns; forming, while the at least one support structure contacts the upper surface of the pattern structure, a buried layer that fills the spaces between the plurality of first patterns; and removing the at least one support structure from the pattern structure so that only the buried layer remains in the spaces between the plurality of first patterns. ### Claim 27 (depends on 26) The method of claim 26, wherein the at least one support structure is formed in a manner such that it includes a linear portion that contacts the upper surface of the pattern structure and extends on the pattern structure and the sacrificial pattern in the second direction that intersects the first direction, and a plurality of protruding portions that protrude from the linear portion toward the substrate and contact sidewalls of the first patterns of the pattern structure. ### Claim 28 (depends on 26) The method of claim 26, wherein, in the forming of the at least one support structure, a lower surface of the at least one support structure that faces the substrate includes a first local surface and a second local surface without a step difference between the first local surface and the second local surface, the first local surface facing the upper surface of the pattern structure, the second local surface facing the space, the lower surface having a planar shape that extends in the second direction. ### Claim 29 (depends on 26) The method of claim 26, wherein, in the forming of the at least one support structure, a lower surface of the at least one support structure that faces the substrate includes a first local surface and a second local surface and extends in the second direction with a step difference between the first local surface and the second local surface, the first local surface facing the upper surface of the pattern structure, the second local surface facing the space, the lower surface having an uneven shape that extends in the second direction.