# US 2018/0025907 A1 · Deposition Of Flowable Silicon-Containing Films

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- Number: US 2018/0025907 A1
- Document ID: US20180025907A1
- Status: Published application
- Kind: A1
- Application number: 15/654,185
- Filed: 2017-07-19
- Published: 2018-01-25
- Earliest claimed: 2016-07-19
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Lakmal C. Kalutarage; Mark Saly; David Thompson; Abhijit Basu Mallick; Tejasvi Ashok; Pramit Manna
- Web page: https://patentgrep.com/patent/US20180025907A1

## CPC

- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6519: {the substance being oxygen}
- H10P 14/6529: {by exposure to a gas or vapour}
- H10P 14/6532: {by exposure to a plasma}
- H10P 14/6681: {the precursor containing a compound comprising Si}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

## Claims

### Claim 1

A processing method comprising exposing a substrate surface to a silicon-containing precursor and a co-reactant to deposit a flowable film, the silicon-containing precursor having at least one akenyl or alkynyl group.

### Claim 2 (depends on 1)

The processing method of claim 1, wherein the co-reactant comprises a plasma comprising a plasma gas.

### Claim 3 (depends on 2)

The processing method of claim 2, wherein the silicon-containing precursor comprises a compound having any of Structures I-V,
where each of R1-R6 is independently selected from the group consisting of CR′CR″2, CCR′, H, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, NR′2 and OR′,
where R′ and R″ are independently selected from the group consisting of H, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl,
wherein at least one of R1-R6 is selected from the group consisting of CR′CR″2 or CCR′.

### Claim 4 (depends on 3)

The processing method of claim 3, wherein one or more of R1-R6 of the silicon-containing precursor is CR′CR″2.

### Claim 5 (depends on 4)

The processing method of claim 4, wherein all of R1-R6 of the silicon-containing precursor comprises CR′CR″2.

### Claim 6 (depends on 5)

The processing method of claim 5, wherein each R′ is the same and each R″ is the same substituent.

### Claim 7 (depends on 6)

The processing method of claim 6, wherein the silicon-containing precursor comprises tetravinylsilane (Si(CHCH2)4).

### Claim 8 (depends on 3)

The processing method of claim 3, wherein one or more of R1-R6 of the silicon-containing precursor is CCR′.

### Claim 9 (depends on 8)

The processing method of claim 8, wherein all of R1-R6 of the silicon-containing precursor comprises CCR′.

### Claim 10 (depends on 9)

The processing method of claim 9, wherein each R′ is the same and each R″ is the same substituent.

### Claim 11 (depends on 10)

The processing method of claim 10, wherein the silicon-containing precursor comprises silicon tetraacetalide (Si(CCH)4).

### Claim 12 (depends on 2)

The processing method of claim 2, wherein the plasma gas comprises one or more of NH3, O2, CO2, CO, Ar, He or H2.

### Claim 13 (depends on 12)

The processing method of claim 12, wherein the plasma gas comprises ammonia.

### Claim 14 (depends on 2)

The processing method of claim 2, further comprising curing the flowable film to form a cured film.

### Claim 15 (depends on 14)

The processing method of claim 14, wherein curing the flowable film comprises exposing the flowable film to one or more of ozone, UV light, steam annealing, ammonia annealing and oxygen plasma.

### Claim 16 (depends on 15)

The processing method of claim 15, wherein the cured film comprises one or more of SiC, SiOC, SiCN, SiOCN, SiO or SiN.

### Claim 17 (depends on 2)

The processing method of claim 2, further comprising doping the flowable film with one or more of B, As or P.

### Claim 18 (depends on 1)

The processing method of claim 1, wherein the silicon-containing precursor is co-flowed with a silane precursor.

### Claim 19

A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
exposing the substrate surface to a silicon-containing precursor and co-reactant to form a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the silicon containing precursor comprising a compound having any of Structures I-V
where each of R1-R6 is independently selected from the group consisting of CR′CR″2, CCR′, H, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl, tert-butyl, NR′2 and OR′,
where R′ and R″ are independently selected from the group consisting of H, methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, isobutyl and tert-butyl, at least one of R1-R6 is selected from the group consisting of CR′CR″2 or CCR′, and the co-reactant comprises an ammonia plasma; and
curing the flowable film to solidify the film and form a substantially seam-free gapfill.

### Claim 20

A processing method comprising:
providing a substrate surface having at least one feature thereon, the at least one feature extending a depth from the substrate surface to a bottom surface, the at least one feature having a width defined by a first sidewall and a second sidewall;
exposing the substrate surface to a silicon-containing precursor and co-reactant to form a flowable film on the substrate surface and the first sidewall, second sidewall and bottom surface of the at least one feature, the flowable film filling the feature with substantially no seam formed, the silicon containing precursor comprising one or more of tetravinylsilane (Si(CHCH2)4) or silicon tetraacetalide (Si(CCH)4), and the co-reactant comprises an ammonia plasma; and
curing the flowable film to solidify the film and form a substantially seam-free gapfill.