# US 2018/0025906 A1 · Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures

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- Number: US 2018/0025906 A1
- Document ID: US20180025906A1
- Status: Published application
- Kind: A1
- Application number: 15/215,102
- Filed: 2016-07-20
- Published: 2018-01-25
- Earliest claimed: 2016-07-20
- Assignees: Micro Technology, Inc.
- Applicants: Micro Technology, Inc.
- Inventors: Timothy A. Quick; Sumeet C. Pandey; Stefan Uhlenbrock
- Web page: https://patentgrep.com/patent/US20180025906A1

## CPC

- H10P 14/6681: {the precursor containing a compound comprising Si}
- C01B 21/068: with silicon
- C07F 7/025: {without C-silicon linkages}
- C09D 7/63: organic
- C23C 16/00: Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes (reactive sputtering or vacuum evaporation C23C14/00)
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/345: {Silicon nitride}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10W 20/076: {in via holes or trenches}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

## Claims

### Claim 1

A method of forming silicon nitride, comprising:
reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride, the silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4.

### Claim 2 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises forming the silicon nitride by atomic layer deposition.

### Claim 3 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises forming the silicon nitride by chemical vapor deposition.

### Claim 4 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises conformally forming the silicon nitride on a substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises reacting the silicon chalcogenate precursor with ammonia, hydrazine, t-butyl hydrazine, a monoalkylhydrazine, a dialkylhydrazine, or combinations thereof.

### Claim 6 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises forming the silicon nitride at a temperature of less than or equal to about 350° C.

### Claim 7 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises forming the silicon nitride at a temperature of less than or equal to about 250° C.

### Claim 8 (depends on 1)

The method of claim 1, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride comprises reacting the silicon chalcogenate precursor and the nitrogen-containing precursor in a plasma-free environment.

### Claim 9

A method of forming silicon nitride, comprising:
reacting a silicon chalcogenate precursor with a substrate to form silicon on the substrate, the silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4;
reacting the silicon with a nitrogen-containing precursor to form nitrogen on the silicon; and
repeating the reacting a silicon chalcogenate precursor and reacting the silicon with a nitrogen-containing precursor acts to form silicon nitride on the substrate.

### Claim 10 (depends on 9)

The method of claim 9, wherein reacting a silicon chalcogenate precursor with a substrate to form silicon on the substrate comprises reacting a silicon chalcogenate precursor comprising Si(XR1)(R2)(R3)(R4), Si(XR1)(XR2)(R3)(R4), Si(XR1)(R2)(XR3)(R4), Si(XR1)(XR2)(R3)(XR4), Si(XR1)(XR2)(XR3)(R4), Si(XR1)(R2)(XR3)(XR4), or Si(XR1)(XR2)(XR3)(XR4) with the substrate.

### Claim 11 (depends on 9)

The method of claim 9, wherein reacting a silicon chalcogenate precursor with a substrate to form silicon on the substrate comprises reacting silicon tetramethylselenoate with the substrate.

### Claim 12 (depends on 9)

The method of claim 9, wherein reacting the silicon with a nitrogen-containing precursor to form nitrogen on the silicon comprises reacting the silicon with ammonia.

### Claim 13

A method of forming silicon nitride on a semiconductor structure, comprising:
forming a substrate comprising at least one feature having an aspect ratio of greater than about 10:1; and
reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride on the at least one feature, the silicon chalcogenate precursor comprising the chemical formula of Si(XR1)nR24-n, where X is sulfur, selenium, or tellurium, R1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4.

### Claim 14 (depends on 13)

The method of claim 13, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride on the at least one feature comprises conformally forming the silicon nitride on the at least one feature.

### Claim 15 (depends on 13)

The method of claim 13, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor comprises forming the silicon nitride by atomic layer deposition.

### Claim 16 (depends on 13)

The method of claim 13, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor comprises forming the silicon nitride by chemical vapor deposition.

### Claim 17 (depends on 13)

The method of claim 13, wherein forming a substrate comprising at least one feature having an aspect ratio of greater than about 10 comprises forming the at least one feature on a thermally sensitive substrate.

### Claim 18 (depends on 13)

The method of claim 13, wherein reacting a silicon chalcogenate precursor and a nitrogen-containing precursor to form silicon nitride on the at least one feature comprises forming the silicon nitride on the at least one feature etchable by a halide.

### Claim at position 19

19-22. (canceled)