# US 2018/0025902 A1 · High Throughput Semiconductor Deposition System

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- Number: US 2018/0025902 A1
- Document ID: US20180025902A1
- Status: Published application
- Kind: A1
- Application number: 15/707,642
- Filed: 2017-09-18
- Published: 2018-01-25
- Earliest claimed: 2012-05-16
- Assignees: Alliance for Sustainable Energy, LLC; Wisconsin Alumni Research Foundation
- Applicants: Alliance for Sustainable Energy, LLC; Wisconsin Alumni Research Foundation
- Inventors: David L. Young; Aaron Joseph Ptak; Thomas F. Kuech; Kevin Schulte; John D. Simon
- Web page: https://patentgrep.com/patent/US20180025902A1

## CPC

- H10P 14/24: using chemical vapour deposition [CVD]
- C30B 25/08: Reaction chambers; Selection of materials therefor
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/36: {characterised by treatments done before the formation of the materials}
- C30B 29/40: AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5μm/minute.

## Claims

### Claim 1

A method of performing hydride vapor phase epitaxy (HVPE) deposition, the method comprising:
providing at least one first source material and at least one first carrier gas flow to a first HVPE mixing zone coupled to a first deposition zone;
providing at least one second source material and at least one second carrier gas flow to a second HVPE mixing zone coupled to a second deposition zone;
heating the first deposition zone to a first temperature;
heating the first HVPE mixing zone to a second temperature;
heating the second deposition zone to a third temperature, wherein the third temperature is different from the first temperature;
heating the second HVPE mixing zone to a fourth temperature;
outputting, from the first HVPE mixing zone into the first deposition zone, first reactant gases produced from the at least one first source material and the at least one first carrier gas flow;
outputting, from the second HVPE mixing zone into the second deposition zone, second reactant gases produced from the at least one second source material and the at least one second carrier gas flow;
placing a substrate into the first deposition zone to grow a first layer from the first reactant gases; and
placing the substrate into the second deposition zone to grow a second layer from the second reactant gases,
wherein the heating of the first deposition zone to the first temperature and the heating of the second deposition zone to the third temperature are performed concurrently.

### Claim 2 (depends on 1)

The method of claim 1, further comprising pre-heating the substrate in a heating zone prior to placing the substrate into the first deposition zone, wherein the heating zone is heated to the first temperature.

### Claim 3 (depends on 1)

The method of claim 1, further comprising establishing a separation between the first deposition zone and the second deposition zone by providing a curtain of inert gas between the first deposition zone and the second deposition zone.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second temperature is higher than the first temperature.

### Claim 5 (depends on 1)

The method of claim 1, wherein the second temperature is different from the fourth temperature.

### Claim 6 (depends on 1)

The method of claim 1, wherein the placing of the substrate into the second deposition zone occurs within 1 second from completion of the placing of the substrate into the first deposition zone.

### Claim 7 (depends on 1)

The method of claim 1, wherein the at least one first source material is provided by a first source boat within the first HVPE mixing zone.

### Claim 8 (depends on 7)

The method of claim 7, further comprising positioning the first source boat at a distance from the first deposition zone that provides uniform mixing of the first reactant gases before outputting the first reactant gases into the first deposition zone.

### Claim 9 (depends on 1)

The method of claim 1, wherein the at least one second source material is provided by a second source boat within the second HVPE mixing zone.

### Claim 10 (depends on 9)

The method of claim 9, further comprising positioning the second source boat at a distance from the second deposition zone that provides uniform mixing of the second reactant gases before outputting the second reactant gases into the second deposition zone.

### Claim 11 (depends on 1)

The method of claim 1, wherein the heating of the first deposition zone to the first temperature and the heating of the first HVPE mixing zone to the second temperature are performed concurrently.

### Claim 12 (depends on 1)

The method of claim 1, wherein the heating of the second deposition zone to the third temperature and the heating of the second HVPE mixing zone to the fourth temperature are performed concurrently.

### Claim 13 (depends on 1)

The method of claim 1, wherein the heating of the first deposition zone to the first temperature, the heating of the first HVPE mixing zone to the second temperature, the heating of the second deposition zone to the third temperature, and the heating of the second HVPE mixing zone to the fourth temperature are performed concurrently.

### Claim 14 (depends on 13)

The method of claim 13, wherein the first temperature, the second temperature, the third temperature, and the fourth temperature are different from each other.

### Claim 15 (depends on 1)

The method of claim 1, further comprising placing the substrate into the first deposition zone to grow a third layer from the first reactant gases after placing the substrate into the second deposition zone to grow the second layer.

### Claim 16 (depends on 15)

The method of claim 15, further comprising:
changing at least one dopant in the second HVPE mixing zone; and
placing the substrate into the second deposition zone to grow a fourth layer from the second reactant gases after placing the substrate into the first deposition zone to grow the third layer.