# US 2018/0025901 A1 · Precleaning Apparatus and Substrate Processing System > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2018/0025901 A1 - Document ID: US20180025901A1 - Status: Published application - Kind: A1 - Application number: 15/416,408 - Filed: 2017-01-26 - Published: 2018-01-25 - Earliest claimed: 2016-07-22 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Keum Seok Park; Sun Jung Kim; Yi Hwan Kim; Pan Kwi Park; Dong Suk Shin; Hyun Kwan Yu; Seung Hun Lee - Web page: https://patentgrep.com/patent/US20180025901A1 ## CPC - H10P 70/20: {Cleaning during device manufacture} - B08B 7/0035: {by radiant energy, e.g. UV, laser, light beam or the like} - B08B 7/04: by a combination of operations - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/32889: {Connection or combination with other apparatus} - H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]} - H10D 30/0275: {forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions} - H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain} - H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/271: {characterised by the preparation of substrate for selective deposition} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 72/0408: {for drying} - H10P 72/0434: {mainly by convection} - H10P 72/0454: {surrounding a central transfer chamber} - H10P 72/0461: {characterised by the presence of two or more transfer chambers} - H10P 72/0466: {characterised by the construction of the load-lock chamber} - H10P 72/72: using electrostatic chucks - H10P 72/7602: {the wafers being placed on a robot blade or gripped by a gripper for conveyance} - H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins} - H01J 2237/335: Cleaning - H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A precleaning apparatus includes a chamber having an internal space in which a substrate is cleaned, a substrate support disposed in the chamber and configured to support the substrate, a plasma generation unit disposed in the chamber and configured to generate plasma gas, a heating unit configured to heat the substrate on the substrate support, a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber, and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber. ## Claims ### Claim 1 A precleaning apparatus comprising: a chamber having an internal space in which a substrate is cleaned; a substrate support disposed in the chamber and configured to support the substrate; a plasma generation unit disposed in the chamber and configured to generate plasma gas; a heating unit configured to heat the substrate on the substrate support; a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the chamber; and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber. ### Claim 2 (depends on 1) The precleaning apparatus of claim 1, further comprising a halogen gas supply unit configured to supply halogen gas for silicon etching or silicon compound etching to the internal space of the chamber. ### Claim 3 (depends on 2) The precleaning apparatus of claim 2, wherein the halogen gas comprises chlorine-based gas. ### Claim 4 (depends on 3) The precleaning apparatus of claim 3, wherein the chlorine-based gas is at least one of Cl2, SiCl4, CHCl3, CH2Cl2, CCl4 and BCl3. ### Claim 5 (depends on 1) The precleaning apparatus of claim 1, wherein the cleaning gas supply unit comprises a first gas supply unit configured to supply fluorine-based gas, a second gas supply unit configured to supply nitrogen-based gas, and a third gas supply unit configured to supply inert gas. ### Claim 6 (depends on 5) The precleaning apparatus of claim 5, wherein the fluorine-based gas is at least one of CHF3, CF4, C2F6, C4F8 and SF6. ### Claim 7 (depends on 1) The precleaning apparatus of claim 1, wherein the heating unit is configured to heat the substrate to a temperature of 800° C. or below. ### Claim 8 (depends on 7) The precleaning apparatus of claim 7, wherein the chamber is formed of ceramic, glass, or quartz. ### Claim 9 (depends on 1) The precleaning apparatus of claim 1, further comprising a shower head configured to discharge gas supplied from the cleaning gas supply unit to be distributed to the substrate. ### Claim 10 A substrate processing system comprising: a load-lock chamber having an internal space configured to accommodate a substrate and to allow a pressure reduction therein; a transfer chamber connected to the internal space of the load-lock chamber and including a transfer robot configured to transport the substrate; a cleaning chamber adjacent the transfer chamber and configured to clean the substrate transported from the transfer chamber by the transfer robot; and a plurality of process chambers adjacent the transfer chamber and configured to process the substrate transported from the transfer chamber by the transfer robot, wherein a plasma generation unit configured to generate plasma gas and a heating unit configured to heat the substrate are disposed in an internal space of the cleaning chamber, and the substrate processing system further comprises a cleaning gas supply unit configured to supply gas for oxide etching to the internal space of the cleaning chamber and a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the cleaning chamber. ### Claim 11 (depends on 10) The substrate processing system of claim 10, further comprising a load port configured to accommodate the substrate and a transfer unit disposed between the load port and the transfer chamber. ### Claim 12 (depends on 10) The substrate processing system of claim 10, further comprising a halogen gas supply unit configured to supply halogen gas for silicon etching or a silicon compound to the internal space of the chamber. ### Claim 13 (depends on 10) The substrate processing system of claim 10, wherein the transfer chamber comprises: a first transfer chamber connected to the internal space of the load-lock chamber and including a first transfer robot configured to transport the substrate; and a second transfer chamber including a second transfer robot configured to transport the substrate; and the substrate processing system further comprises a connection chamber connecting the first transfer chamber and the second transfer chamber. ### Claim 14 (depends on 13) The substrate processing system of claim 13, wherein the cleaning chamber is adjacent the first transfer chamber in such a manner that the first transfer chamber is connected to the internal space of the cleaning chamber, and the plurality of process chambers are adjacent the second transfer chamber in such a manner that the second transfer chamber is connected to an internal space of each of the plurality of process chambers. ### Claim 16 A precleaning apparatus comprising: a chamber; a substrate support in an internal space of the chamber and configured to support a substrate having a contaminated or damaged portion; a heating unit configured to heat the substrate on the substrate support; a hydrogen gas supply unit configured to supply hydrogen gas to the internal space of the chamber to heat-treat the heated substrate; a plasma generation unit disposed in the chamber and configured to generate plasma gas; a cleaning gas supply unit configured to supply gas to the internal space of the chamber to remove an oxide from the contaminated or damaged portion of the substrate using plasma etching; and a halogen gas supply unit configured to supply halogen gas to the internal space of the chamber to remove a surface layer of the contaminated or damaged portion of the substrate. ### Claim 17 (depends on 16) The precleaning apparatus of claim 16, wherein the halogen gas comprises a chlorine-based gas that is at least one of Cl2, SiCl4, CHCl3, CH2Cl2, CCl4 and BCl3. ### Claim 18 (depends on 16) The precleaning apparatus of claim 16, wherein the cleaning gas supply unit comprises a first gas supply unit configured to supply fluorine-based gas to the internal space of the chamber, a second gas supply unit configured to supply nitrogen-based gas to the internal space of the chamber, and/or a third gas supply unit configured to supply inert gas to the internal space of the chamber. ### Claim 19 (depends on 16) The precleaning apparatus of claim 16, wherein the heating unit is configured to heat the substrate to a temperature of no greater than 800° C. ### Claim 20 (depends on 19) The precleaning apparatus of claim 19, wherein the chamber is formed of ceramic, glass, or quartz.